Abstract
Electron beam (EB) nanolithography on resist films coated on vertical side faces of Si blocks with micrometer-order size is demonstrated. This is achieved by combining the authors' original three-dimensional (3D) EB writing technique with the authors' newly developed low-viscosity resist solution. Resist coating with a 2-butanone/hexane low-viscosity solution enables the authors to uniformly coat a high-resolution EB resist poly(methyl methacrylate) on the vertical side faces of Si blocks. The mechanism of uniform coating on the vertical side faces can be understood by considering the lower viscosity of the authors' resist solution. Moreover, Monte Carlo simulation and experimental 3D EB lithography reveal that dense nanopatterning on opposite side faces of a micrometer-order block with simultaneous development is as attainable as that on a flat substrate. The combination of the resist-coating method and 3D EB writing with ion etching from horizontal directions of substrates is promising for creating 3D nanostructures in semiconductors and thus for 3D nanotechnology.
| Original language | English |
|---|---|
| Article number | 041601 |
| Journal | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics |
| Volume | 30 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2012 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Electron beam lithography on vertical side faces of micrometer-order Si block. / Yamazaki, Kenji; Yamaguchi, Hiroshi.
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 30, No. 4, 041601, 2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electron beam lithography on vertical side faces of micrometer-order Si block
AU - Yamazaki, Kenji
AU - Yamaguchi, Hiroshi
PY - 2012
Y1 - 2012
N2 - Electron beam (EB) nanolithography on resist films coated on vertical side faces of Si blocks with micrometer-order size is demonstrated. This is achieved by combining the authors' original three-dimensional (3D) EB writing technique with the authors' newly developed low-viscosity resist solution. Resist coating with a 2-butanone/hexane low-viscosity solution enables the authors to uniformly coat a high-resolution EB resist poly(methyl methacrylate) on the vertical side faces of Si blocks. The mechanism of uniform coating on the vertical side faces can be understood by considering the lower viscosity of the authors' resist solution. Moreover, Monte Carlo simulation and experimental 3D EB lithography reveal that dense nanopatterning on opposite side faces of a micrometer-order block with simultaneous development is as attainable as that on a flat substrate. The combination of the resist-coating method and 3D EB writing with ion etching from horizontal directions of substrates is promising for creating 3D nanostructures in semiconductors and thus for 3D nanotechnology.
AB - Electron beam (EB) nanolithography on resist films coated on vertical side faces of Si blocks with micrometer-order size is demonstrated. This is achieved by combining the authors' original three-dimensional (3D) EB writing technique with the authors' newly developed low-viscosity resist solution. Resist coating with a 2-butanone/hexane low-viscosity solution enables the authors to uniformly coat a high-resolution EB resist poly(methyl methacrylate) on the vertical side faces of Si blocks. The mechanism of uniform coating on the vertical side faces can be understood by considering the lower viscosity of the authors' resist solution. Moreover, Monte Carlo simulation and experimental 3D EB lithography reveal that dense nanopatterning on opposite side faces of a micrometer-order block with simultaneous development is as attainable as that on a flat substrate. The combination of the resist-coating method and 3D EB writing with ion etching from horizontal directions of substrates is promising for creating 3D nanostructures in semiconductors and thus for 3D nanotechnology.
UR - http://www.scopus.com/inward/record.url?scp=84864272081&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864272081&partnerID=8YFLogxK
U2 - 10.1116/1.4719561
DO - 10.1116/1.4719561
M3 - Article
AN - SCOPUS:84864272081
VL - 30
JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
SN - 2166-2746
IS - 4
M1 - 041601
ER -