Electrical resistivity in SmCoIn5 under high pressure

Masahito Koeda, Masato Hedo, Tetsuya Fujiwara, Yoshiya Uwatoko, Tomoko Sadamasa, Yoshihiko Inada

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

SmCoIn5 crystallizes in the tetragonal HoCoGa5 type structure. This type of crystal structure have attracted much attention because new heavy-fermion superconductivity with very high superconducting transition temperature Tc=18.5 K was discovered in PuCoGa5. It is expected that Sm has a similar ground state to Pu compounds. Thus we have measured the electrical resistivity on a single crystal of SmCoIn5 using a cubic anvil pressure cell at temperature 2-300 K under high pressure from 2 to 8 GPa. The value of TN that was 11.9 K at ambient pressure in SmCoIn5 increased to 13.2 K at P=2 GPa,. Above 2 GPa, It decreased monotonously with increasing pressure and was 12.6 K at 8 GPa. It may be thought that the 4f electrons in SmCoIn5 are more localized than 5f electrons in PuCoGa5.

Original languageEnglish
Pages (from-to)62-63
Number of pages2
Journaljournal of the physical society of japan
Volume76
Issue numberSUPPL. A
DOIs
Publication statusPublished - Jan 1 2007

Keywords

  • Electrical resistivity
  • Pressure effects
  • SmCoIn

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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