Electrical Properties of Zn-Mg-RE (RE=Y, Gd) Icosahedral Quasicrystals

Ryusuke Kondo, Tatsuo Hashimoto, Keiichi Edagawa, Shin Takeuchi, Tsunehiro Takeuchi, Uichiro Mizutani

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The electrical resistivity and the magnetoresistance have been measured for icosahedral phases of Zn-Mg-RE (RE=Y, Gd). Electrical resistivities of bulk samples of Zn56Mg36Y8, annealed ribbon samples of Zn62Mg30Y8 and annealed ribbon samples of Zn55Mg35.5Gd9.5 are 1 mΩcm, 0.3mΩcm and 0.3 mΩcm, respectively. The resistivities of all the samples decrease by 5 - 7% from 4.2 K to 273 K. At low temperatures, the conductivity of Zn-Mg-Y obeys T1/2 dependence, while the resistivity of Zn-Mg-Gd obeys In T dependence, where Gd atoms bear magnetic moments. In Zn-Mg-Y, the magnetoresistance is negative and insensitive to temperature, while in Zn-Mg-Gd it is positive in a low field range and becomes negative at high field with its magnitude larger at lower temperature. These results are interpreted by the theories of electron-electron interaction, weak localization and s-d exchange interaction.

Original languageEnglish
Pages (from-to)1097-1102
Number of pages6
Journaljournal of the physical society of japan
Volume66
Issue number4
DOIs
Publication statusPublished - Apr 1997
Externally publishedYes

Keywords

  • Electrical resistivity
  • Electron-electron interaction
  • Icosahedral quasicrystal
  • Magnetoresistance
  • Weak localization
  • Zn-Mg-Gd alloy
  • Zn-Mg-Y alloy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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