Electrical properties of an organic conductor, β′-(BEDT-TTF)2ICI2 up to 10 GPa

Takafumi Adachi; Emiko Ojima; Bakhyt Zh Narymbetov; Hayao Kobayashi; Takafumi Miyazaki; Madoka Tokumoto

doi:10.1246/cl.2000.406

Electrical properties of an organic conductor, β′-(BEDT-TTF)₂ICI₂ up to 10 GPa

Takafumi Adachi, Emiko Ojima, Bakhyt Zh Narymbetov, Hayao Kobayashi, Takafumi Miyazaki, Madoka Tokumoto

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Four-probe resistivity measurements were made on an organic semiconductor, β′-(BEDT-TTF)₂ICI₂ up to 10 GPa by using a diamond anvil high-pressure cell. The activation energy was decreased with increasing pressure and the metallic phase appeared around 8 GPa. When the pressure was kept around 10 GPa, the resistivity was gradually increased with time, indicating an irreversible pressure-induced solid state transformation.

Original language	English
Pages (from-to)	406-407
Number of pages	2
Journal	Chemistry Letters
Issue number	4
DOIs	https://doi.org/10.1246/cl.2000.406
Publication status	Published - Jan 1 2000
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)

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abstract = "Four-probe resistivity measurements were made on an organic semiconductor, β′-(BEDT-TTF)2ICI2 up to 10 GPa by using a diamond anvil high-pressure cell. The activation energy was decreased with increasing pressure and the metallic phase appeared around 8 GPa. When the pressure was kept around 10 GPa, the resistivity was gradually increased with time, indicating an irreversible pressure-induced solid state transformation.",

author = "Takafumi Adachi and Emiko Ojima and Narymbetov, {Bakhyt Zh} and Hayao Kobayashi and Takafumi Miyazaki and Madoka Tokumoto",

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AU - Adachi, Takafumi

AU - Ojima, Emiko

AU - Narymbetov, Bakhyt Zh

AU - Kobayashi, Hayao

AU - Miyazaki, Takafumi

AU - Tokumoto, Madoka

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Y1 - 2000/1/1

N2 - Four-probe resistivity measurements were made on an organic semiconductor, β′-(BEDT-TTF)2ICI2 up to 10 GPa by using a diamond anvil high-pressure cell. The activation energy was decreased with increasing pressure and the metallic phase appeared around 8 GPa. When the pressure was kept around 10 GPa, the resistivity was gradually increased with time, indicating an irreversible pressure-induced solid state transformation.

AB - Four-probe resistivity measurements were made on an organic semiconductor, β′-(BEDT-TTF)2ICI2 up to 10 GPa by using a diamond anvil high-pressure cell. The activation energy was decreased with increasing pressure and the metallic phase appeared around 8 GPa. When the pressure was kept around 10 GPa, the resistivity was gradually increased with time, indicating an irreversible pressure-induced solid state transformation.

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