Electrical and optical properties of In2O3 thin film with carbon ion implantation have been studied. The location of the implanted carbon in the film was also investigated by means of a high-resolution electron microscope. Carbon ions were implanted into In2O3 thin films with an energy of 30 keV at doses of 1 × 1015 to 2 × 1016 cm-2. After implantation the films were annealed for 1 h in air and subsequently for 1 h in a vacuum. After the two step annealing at 350°C, the electrical resistivity achieved for a sample with an ion dose of 5 × 1015 cm-2 was 5.4 × 10-4 Ω cm with an optical transmittance of 82% at a wavelength of 550 nm.
|Number of pages||6|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - Jul 2000|
ASJC Scopus subject areas
- Nuclear and High Energy Physics