Electrical and optical properties of carbon implanted In2O3 thin film

K. Hanamoto, M. Sasaki, T. Yoneda, K. Miyatani, H. Miki, C. Kaito, Y. Nakayama

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Electrical and optical properties of In2O3 thin film with carbon ion implantation have been studied. The location of the implanted carbon in the film was also investigated by means of a high-resolution electron microscope. Carbon ions were implanted into In2O3 thin films with an energy of 30 keV at doses of 1 × 1015 to 2 × 1016 cm-2. After implantation the films were annealed for 1 h in air and subsequently for 1 h in a vacuum. After the two step annealing at 350°C, the electrical resistivity achieved for a sample with an ion dose of 5 × 1015 cm-2 was 5.4 × 10-4 Ω cm with an optical transmittance of 82% at a wavelength of 550 nm.

Original languageEnglish
Pages (from-to)389-394
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume168
Issue number3
DOIs
Publication statusPublished - Jul 2000
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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