Electrical and optical properties of boron and nitrogen implanted In2O3 thin films

Katsumi Hanamoto, M. Sasaki, K. Miyatani, C. Kaito, H. Miki, Y. Nakayama

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Electrical and optical properties of In2O3 thin films doped with boron and nitrogen have been studied. Boron and nitrogen ions were implanted into In2O3 thin films with an energy of 25 and 35 keV, respectively, at doses of 1×1015-1.6×1016cm-2. After implantation the films were annealed for 1 h in air and subsequently for 1 h in a vacuum. After the two-step annealing at 350 °C, the electrical resistivity of the boron implanted sample with a dose of 4×1015 cm-2 achieved 4.4×10-4 Ω cm with an averaged optical transmittance of 84% at a wavelength between 380 and 780 nm. On the other hand, for nitrogen implanted samples, the resistivity did not improve by ion implantation but the optical transmittance was unchanged.

Original languageEnglish
Pages (from-to)287-291
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume173
Issue number3
DOIs
Publication statusPublished - Jan 2001
Externally publishedYes

Fingerprint

Boron
boron
Electric properties
Nitrogen
Optical properties
electrical properties
Opacity
optical properties
nitrogen
Thin films
transmittance
thin films
dosage
electrical resistivity
nitrogen ions
Ion implantation
ion implantation
implantation
Vacuum
Annealing

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Electrical and optical properties of boron and nitrogen implanted In2O3 thin films. / Hanamoto, Katsumi; Sasaki, M.; Miyatani, K.; Kaito, C.; Miki, H.; Nakayama, Y.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 173, No. 3, 01.2001, p. 287-291.

Research output: Contribution to journalArticle

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AU - Nakayama, Y.

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AB - Electrical and optical properties of In2O3 thin films doped with boron and nitrogen have been studied. Boron and nitrogen ions were implanted into In2O3 thin films with an energy of 25 and 35 keV, respectively, at doses of 1×1015-1.6×1016cm-2. After implantation the films were annealed for 1 h in air and subsequently for 1 h in a vacuum. After the two-step annealing at 350 °C, the electrical resistivity of the boron implanted sample with a dose of 4×1015 cm-2 achieved 4.4×10-4 Ω cm with an averaged optical transmittance of 84% at a wavelength between 380 and 780 nm. On the other hand, for nitrogen implanted samples, the resistivity did not improve by ion implantation but the optical transmittance was unchanged.

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