Electrical and optical properties of In2O3 thin films doped with boron and nitrogen have been studied. Boron and nitrogen ions were implanted into In2O3 thin films with an energy of 25 and 35 keV, respectively, at doses of 1×1015-1.6×1016cm-2. After implantation the films were annealed for 1 h in air and subsequently for 1 h in a vacuum. After the two-step annealing at 350 °C, the electrical resistivity of the boron implanted sample with a dose of 4×1015 cm-2 achieved 4.4×10-4 Ω cm with an averaged optical transmittance of 84% at a wavelength between 380 and 780 nm. On the other hand, for nitrogen implanted samples, the resistivity did not improve by ion implantation but the optical transmittance was unchanged.
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - Jan 2001|
ASJC Scopus subject areas
- Nuclear and High Energy Physics