Electric-field effects on the stability of impurity levels on a grain bound- ary in mc-Si for solar cells

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)209-213
Number of pages5
JournalProc. The Forum on the Sciecne and Technology of Silicon Materials 2014
Publication statusPublished - 2014

Cite this

@article{699b796a5faf4c94975174518f8beb1c,
title = "Electric-field effects on the stability of impurity levels on a grain bound- ary in mc-Si for solar cells",
author = "Takeshi Nishikawa",
year = "2014",
language = "English",
pages = "209--213",
journal = "Proc. The Forum on the Sciecne and Technology of Silicon Materials 2014",

}

TY - JOUR

T1 - Electric-field effects on the stability of impurity levels on a grain bound- ary in mc-Si for solar cells

AU - Nishikawa, Takeshi

PY - 2014

Y1 - 2014

M3 - Article

SP - 209

EP - 213

JO - Proc. The Forum on the Sciecne and Technology of Silicon Materials 2014

JF - Proc. The Forum on the Sciecne and Technology of Silicon Materials 2014

ER -