Electric-double-layer transistors with thin crystals of FeSe 1-xTex (x=0.9 and 1.0)

Ritsuko Eguchi, M. Senda, E. Uesugi, Hidenori Goto, Takashi Kambe, T. Noji, Y. Koike, A. Fujiwara, Yoshihiro Kubozono

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Field-effect transistor (FET) devices using thin crystals of FeSe 1-xTex (x=0.9 and 1.0) have been fabricated with an electric-double-layer (EDL) capacitor. Despite the presence of substantial quantities of electron and hole carriers in the bulk due to the semimetallic electronic structure of FeSe1-xTex, we have observed p-channel depletion-type FET characteristics, in contrast to the n-channel normally on FET characteristics of a Bi2Se3 EDL FET. In FeSe1-xTex, the mobile carriers, holes, are depleted in the channel region by accumulating electrons, resulting in a decrease in conductivity. This result is consistent with the experimentally observed positive Hall coefficient at room temperature.

Original languageEnglish
Article number103506
JournalApplied Physics Letters
Volume102
Issue number10
DOIs
Publication statusPublished - Mar 11 2013

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transistors
field effect transistors
crystals
electrochemical capacitors
Hall effect
depletion
electrons
electronic structure
conductivity
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electric-double-layer transistors with thin crystals of FeSe 1-xTex (x=0.9 and 1.0). / Eguchi, Ritsuko; Senda, M.; Uesugi, E.; Goto, Hidenori; Kambe, Takashi; Noji, T.; Koike, Y.; Fujiwara, A.; Kubozono, Yoshihiro.

In: Applied Physics Letters, Vol. 102, No. 10, 103506, 11.03.2013.

Research output: Contribution to journalArticle

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AU - Goto, Hidenori

AU - Kambe, Takashi

AU - Noji, T.

AU - Koike, Y.

AU - Fujiwara, A.

AU - Kubozono, Yoshihiro

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