Abstract
We have fabricated transition metal oxide (TMO) films on n-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. A dramatic decrease in the resistance and enhancement of the superconducting critical temperature are observed for VO2/TiO 2:Nb and YBa2Cu3Oz/SrTiO 3:Nb, respectively. Out-of-plane voltage measurements under light irradiation indicate hole-carrier injection from the substrate to the film in both the cases. The present photocarrier injection technique could apply to many TMOs to control the hole carrier density externally.
| Original language | English |
|---|---|
| Pages (from-to) | 448-449 |
| Number of pages | 2 |
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 272-276 |
| Issue number | I |
| DOIs | |
| Publication status | Published - May 2004 |
| Externally published | Yes |
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Keywords
- Heterostructurc
- Photocarrier injection
- Transition metal oxides
- VO
- YBaCuO
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Efficient photocarrier injection to transition metal oxides. / Muraoka, Yuji; Yamauchi, T.; Muramatsu, T.; Yamaura, J.; Hiroi, Z.
In: Journal of Magnetism and Magnetic Materials, Vol. 272-276, No. I, 05.2004, p. 448-449.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Efficient photocarrier injection to transition metal oxides
AU - Muraoka, Yuji
AU - Yamauchi, T.
AU - Muramatsu, T.
AU - Yamaura, J.
AU - Hiroi, Z.
PY - 2004/5
Y1 - 2004/5
N2 - We have fabricated transition metal oxide (TMO) films on n-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. A dramatic decrease in the resistance and enhancement of the superconducting critical temperature are observed for VO2/TiO 2:Nb and YBa2Cu3Oz/SrTiO 3:Nb, respectively. Out-of-plane voltage measurements under light irradiation indicate hole-carrier injection from the substrate to the film in both the cases. The present photocarrier injection technique could apply to many TMOs to control the hole carrier density externally.
AB - We have fabricated transition metal oxide (TMO) films on n-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. A dramatic decrease in the resistance and enhancement of the superconducting critical temperature are observed for VO2/TiO 2:Nb and YBa2Cu3Oz/SrTiO 3:Nb, respectively. Out-of-plane voltage measurements under light irradiation indicate hole-carrier injection from the substrate to the film in both the cases. The present photocarrier injection technique could apply to many TMOs to control the hole carrier density externally.
KW - Heterostructurc
KW - Photocarrier injection
KW - Transition metal oxides
KW - VO
KW - YBaCuO
UR - http://www.scopus.com/inward/record.url?scp=8444237531&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=8444237531&partnerID=8YFLogxK
U2 - 10.1016/j.jmmm.2003.12.1290
DO - 10.1016/j.jmmm.2003.12.1290
M3 - Article
AN - SCOPUS:8444237531
VL - 272-276
SP - 448
EP - 449
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
IS - I
ER -