Abstract
We have fabricated transition metal oxide (TMO) films on n-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. A dramatic decrease in the resistance and enhancement of the superconducting critical temperature are observed for VO2/TiO 2:Nb and YBa2Cu3Oz/SrTiO 3:Nb, respectively. Out-of-plane voltage measurements under light irradiation indicate hole-carrier injection from the substrate to the film in both the cases. The present photocarrier injection technique could apply to many TMOs to control the hole carrier density externally.
| Original language | English |
|---|---|
| Pages (from-to) | 448-449 |
| Number of pages | 2 |
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 272-276 |
| Issue number | I |
| DOIs | |
| Publication status | Published - May 2004 |
| Externally published | Yes |
Keywords
- Heterostructurc
- Photocarrier injection
- Transition metal oxides
- VO
- YBaCuO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Fingerprint Dive into the research topics of 'Efficient photocarrier injection to transition metal oxides'. Together they form a unique fingerprint.
Cite this
Muraoka, Y., Yamauchi, T., Muramatsu, T., Yamaura, J., & Hiroi, Z. (2004). Efficient photocarrier injection to transition metal oxides. Journal of Magnetism and Magnetic Materials, 272-276(I), 448-449. https://doi.org/10.1016/j.jmmm.2003.12.1290