Efficient photocarrier injection to transition metal oxides

Yuji Muraoka; T. Yamauchi; T. Muramatsu; J. Yamaura; Z. Hiroi

doi:10.1016/j.jmmm.2003.12.1290

Efficient photocarrier injection to transition metal oxides

Yuji Muraoka, T. Yamauchi, T. Muramatsu, J. Yamaura, Z. Hiroi

Research output: Contribution to journal › Article

13 Citations (Scopus)

Abstract

We have fabricated transition metal oxide (TMO) films on n-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. A dramatic decrease in the resistance and enhancement of the superconducting critical temperature are observed for VO₂/TiO ₂:Nb and YBa₂Cu₃O_z/SrTiO ₃:Nb, respectively. Out-of-plane voltage measurements under light irradiation indicate hole-carrier injection from the substrate to the film in both the cases. The present photocarrier injection technique could apply to many TMOs to control the hole carrier density externally.

Original language	English
Pages (from-to)	448-449
Number of pages	2
Journal	Journal of Magnetism and Magnetic Materials
Volume	272-276
Issue number	I
DOIs	https://doi.org/10.1016/j.jmmm.2003.12.1290
Publication status	Published - May 2004
Externally published	Yes

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Keywords

Heterostructurc
Photocarrier injection
Transition metal oxides
VO
YBaCuO

ASJC Scopus subject areas

Condensed Matter Physics

Cite this

Muraoka, Y., Yamauchi, T., Muramatsu, T., Yamaura, J., & Hiroi, Z. (2004). Efficient photocarrier injection to transition metal oxides. Journal of Magnetism and Magnetic Materials, 272-276(I), 448-449. https://doi.org/10.1016/j.jmmm.2003.12.1290

@article{5ac86eb50e7d4022b607f32f44650e28,

title = "Efficient photocarrier injection to transition metal oxides",

abstract = "We have fabricated transition metal oxide (TMO) films on n-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. A dramatic decrease in the resistance and enhancement of the superconducting critical temperature are observed for VO2/TiO 2:Nb and YBa2Cu3Oz/SrTiO 3:Nb, respectively. Out-of-plane voltage measurements under light irradiation indicate hole-carrier injection from the substrate to the film in both the cases. The present photocarrier injection technique could apply to many TMOs to control the hole carrier density externally.",

keywords = "Heterostructurc, Photocarrier injection, Transition metal oxides, VO, YBaCuO",

author = "Yuji Muraoka and T. Yamauchi and T. Muramatsu and J. Yamaura and Z. Hiroi",

year = "2004",

month = may

doi = "10.1016/j.jmmm.2003.12.1290",

language = "English",

volume = "272-276",

pages = "448--449",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "I",

}

TY - JOUR

T1 - Efficient photocarrier injection to transition metal oxides

AU - Muraoka, Yuji

AU - Yamauchi, T.

AU - Muramatsu, T.

AU - Yamaura, J.

AU - Hiroi, Z.

PY - 2004/5

Y1 - 2004/5

N2 - We have fabricated transition metal oxide (TMO) films on n-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. A dramatic decrease in the resistance and enhancement of the superconducting critical temperature are observed for VO2/TiO 2:Nb and YBa2Cu3Oz/SrTiO 3:Nb, respectively. Out-of-plane voltage measurements under light irradiation indicate hole-carrier injection from the substrate to the film in both the cases. The present photocarrier injection technique could apply to many TMOs to control the hole carrier density externally.

AB - We have fabricated transition metal oxide (TMO) films on n-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. A dramatic decrease in the resistance and enhancement of the superconducting critical temperature are observed for VO2/TiO 2:Nb and YBa2Cu3Oz/SrTiO 3:Nb, respectively. Out-of-plane voltage measurements under light irradiation indicate hole-carrier injection from the substrate to the film in both the cases. The present photocarrier injection technique could apply to many TMOs to control the hole carrier density externally.

KW - Heterostructurc

KW - Photocarrier injection

KW - Transition metal oxides

KW - VO

KW - YBaCuO

UR - http://www.scopus.com/inward/record.url?scp=8444237531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=8444237531&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2003.12.1290

DO - 10.1016/j.jmmm.2003.12.1290

M3 - Article

AN - SCOPUS:8444237531

VL - 272-276

SP - 448

EP - 449

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - I

ER -

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10.1016/j.jmmm.2003.12.1290