Efficient photocarrier injection to transition metal oxides

Y. Muraoka; T. Yamauchi; T. Muramatsu; J. Yamaura; Z. Hiroi

doi:10.1016/j.jmmm.2003.12.1290

Efficient photocarrier injection to transition metal oxides

Y. Muraoka, T. Yamauchi, T. Muramatsu, J. Yamaura, Z. Hiroi

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We have fabricated transition metal oxide (TMO) films on n-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. A dramatic decrease in the resistance and enhancement of the superconducting critical temperature are observed for VO₂/TiO ₂:Nb and YBa₂Cu₃O_z/SrTiO ₃:Nb, respectively. Out-of-plane voltage measurements under light irradiation indicate hole-carrier injection from the substrate to the film in both the cases. The present photocarrier injection technique could apply to many TMOs to control the hole carrier density externally.

Original language	English
Pages (from-to)	448-449
Number of pages	2
Journal	Journal of Magnetism and Magnetic Materials
Volume	272-276
Issue number	I
DOIs	https://doi.org/10.1016/j.jmmm.2003.12.1290
Publication status	Published - May 2004
Externally published	Yes

Keywords

Heterostructurc
Photocarrier injection
Transition metal oxides
VO
YBaCuO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Efficient photocarrier injection to transition metal oxides",

abstract = "We have fabricated transition metal oxide (TMO) films on n-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. A dramatic decrease in the resistance and enhancement of the superconducting critical temperature are observed for VO2/TiO 2:Nb and YBa2Cu3Oz/SrTiO 3:Nb, respectively. Out-of-plane voltage measurements under light irradiation indicate hole-carrier injection from the substrate to the film in both the cases. The present photocarrier injection technique could apply to many TMOs to control the hole carrier density externally.",

keywords = "Heterostructurc, Photocarrier injection, Transition metal oxides, VO, YBaCuO",

author = "Y. Muraoka and T. Yamauchi and T. Muramatsu and J. Yamaura and Z. Hiroi",

note = "Funding Information: We thank Y. Ueda for helpful discussion. This work was supported by Grants-in-Aid for Scientific Research on Priority Areas (A) and Creative Scientific Research provided by the Ministry of Education, Culture, Sports, Science and Technology, Japan. ",

year = "2004",

month = may,

doi = "10.1016/j.jmmm.2003.12.1290",

language = "English",

volume = "272-276",

pages = "448--449",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "I",

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TY - JOUR

T1 - Efficient photocarrier injection to transition metal oxides

AU - Muraoka, Y.

AU - Yamauchi, T.

AU - Muramatsu, T.

AU - Yamaura, J.

AU - Hiroi, Z.

N1 - Funding Information: We thank Y. Ueda for helpful discussion. This work was supported by Grants-in-Aid for Scientific Research on Priority Areas (A) and Creative Scientific Research provided by the Ministry of Education, Culture, Sports, Science and Technology, Japan.

PY - 2004/5

Y1 - 2004/5

N2 - We have fabricated transition metal oxide (TMO) films on n-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. A dramatic decrease in the resistance and enhancement of the superconducting critical temperature are observed for VO2/TiO 2:Nb and YBa2Cu3Oz/SrTiO 3:Nb, respectively. Out-of-plane voltage measurements under light irradiation indicate hole-carrier injection from the substrate to the film in both the cases. The present photocarrier injection technique could apply to many TMOs to control the hole carrier density externally.

AB - We have fabricated transition metal oxide (TMO) films on n-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. A dramatic decrease in the resistance and enhancement of the superconducting critical temperature are observed for VO2/TiO 2:Nb and YBa2Cu3Oz/SrTiO 3:Nb, respectively. Out-of-plane voltage measurements under light irradiation indicate hole-carrier injection from the substrate to the film in both the cases. The present photocarrier injection technique could apply to many TMOs to control the hole carrier density externally.

KW - Heterostructurc

KW - Photocarrier injection

KW - Transition metal oxides

KW - VO

KW - YBaCuO

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SP - 448

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JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - I

ER -

Efficient photocarrier injection to transition metal oxides

Abstract

Keywords

ASJC Scopus subject areas

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