Efficient photocarrier injection in a transition metal oxide heterostructure

Y. Muraoka, T. Yamauchi, Y. Ueda, Z. Hiroi

Research output: Contribution to journalLetterpeer-review

51 Citations (Scopus)


An efficient method for doping a transition metal oxide (TMO) with hole carriers is presented: photocarrier injection (PCI) in an oxide heterostructure. It is shown that an insulating vanadium dioxide (VO2) film is rendered metallic under light irradiation by PCI from an n-type titanium dioxide (TiO2) substrate doped with Nb. Consequently, a large photoconductivity, which is exceptional for TMOs, is found in the VO2/TiO2:Nb heterostructure. We propose an electronic band structure where photoinduced holes created in TiO2:Nb can be transferred into the filled V 3d band via the low-lying O 2p band of VO2.

Original languageEnglish
Pages (from-to)L757-L763
JournalJournal of Physics Condensed Matter
Issue number49
Publication statusPublished - Dec 16 2002
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


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