Efficient photocarrier injection in a transition metal oxide heterostructure

Yuji Muraoka, T. Yamauchi, Y. Ueda, Z. Hiroi

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

An efficient method for doping a transition metal oxide (TMO) with hole carriers is presented: photocarrier injection (PCI) in an oxide heterostructure. It is shown that an insulating vanadium dioxide (VO2) film is rendered metallic under light irradiation by PCI from an n-type titanium dioxide (TiO2) substrate doped with Nb. Consequently, a large photoconductivity, which is exceptional for TMOs, is found in the VO2/TiO2:Nb heterostructure. We propose an electronic band structure where photoinduced holes created in TiO2:Nb can be transferred into the filled V 3d band via the low-lying O 2p band of VO2.

Original languageEnglish
JournalJournal of Physics Condensed Matter
Volume14
Issue number49
DOIs
Publication statusPublished - Dec 16 2002
Externally publishedYes

Fingerprint

Oxides
Transition metals
metal oxides
Heterojunctions
transition metals
injection
Photoconductivity
Vanadium
Band structure
Titanium dioxide
Doping (additives)
Irradiation
dioxides
titanium oxides
photoconductivity
vanadium
Substrates
irradiation
oxides
electronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Efficient photocarrier injection in a transition metal oxide heterostructure. / Muraoka, Yuji; Yamauchi, T.; Ueda, Y.; Hiroi, Z.

In: Journal of Physics Condensed Matter, Vol. 14, No. 49, 16.12.2002.

Research output: Contribution to journalArticle

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