Abstract
An efficient method for doping a transition metal oxide (TMO) with hole carriers is presented: photocarrier injection (PCI) in an oxide heterostructure. It is shown that an insulating vanadium dioxide (VO2) film is rendered metallic under light irradiation by PCI from an n-type titanium dioxide (TiO2) substrate doped with Nb. Consequently, a large photoconductivity, which is exceptional for TMOs, is found in the VO2/TiO2:Nb heterostructure. We propose an electronic band structure where photoinduced holes created in TiO2:Nb can be transferred into the filled V 3d band via the low-lying O 2p band of VO2.
| Original language | English |
|---|---|
| Journal | Journal of Physics Condensed Matter |
| Volume | 14 |
| Issue number | 49 |
| DOIs | |
| Publication status | Published - Dec 16 2002 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Efficient photocarrier injection in a transition metal oxide heterostructure. / Muraoka, Yuji; Yamauchi, T.; Ueda, Y.; Hiroi, Z.
In: Journal of Physics Condensed Matter, Vol. 14, No. 49, 16.12.2002.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Efficient photocarrier injection in a transition metal oxide heterostructure
AU - Muraoka, Yuji
AU - Yamauchi, T.
AU - Ueda, Y.
AU - Hiroi, Z.
PY - 2002/12/16
Y1 - 2002/12/16
N2 - An efficient method for doping a transition metal oxide (TMO) with hole carriers is presented: photocarrier injection (PCI) in an oxide heterostructure. It is shown that an insulating vanadium dioxide (VO2) film is rendered metallic under light irradiation by PCI from an n-type titanium dioxide (TiO2) substrate doped with Nb. Consequently, a large photoconductivity, which is exceptional for TMOs, is found in the VO2/TiO2:Nb heterostructure. We propose an electronic band structure where photoinduced holes created in TiO2:Nb can be transferred into the filled V 3d band via the low-lying O 2p band of VO2.
AB - An efficient method for doping a transition metal oxide (TMO) with hole carriers is presented: photocarrier injection (PCI) in an oxide heterostructure. It is shown that an insulating vanadium dioxide (VO2) film is rendered metallic under light irradiation by PCI from an n-type titanium dioxide (TiO2) substrate doped with Nb. Consequently, a large photoconductivity, which is exceptional for TMOs, is found in the VO2/TiO2:Nb heterostructure. We propose an electronic band structure where photoinduced holes created in TiO2:Nb can be transferred into the filled V 3d band via the low-lying O 2p band of VO2.
UR - http://www.scopus.com/inward/record.url?scp=0037122371&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037122371&partnerID=8YFLogxK
U2 - 10.1088/0953-8984/14/49/104
DO - 10.1088/0953-8984/14/49/104
M3 - Article
AN - SCOPUS:0037122371
VL - 14
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
SN - 0953-8984
IS - 49
ER -