Efficiency of photocarrier injection in a VO2/TiO2: Nb heterostructure

Zenji Hiroi, Tohru Yamauchi, Yuji Muraoka, Takaki Muramatsu, Jun Ichi Yamaura

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The efficiency of photocarrier injection in a VO2/TiO 2:Nb heterostructure is studied by measuring I-V characteristics at room temperature under ultraviolet light irradiation. It is revealed that photogenerated hole carriers in the TiO2:Nb substrate are injected and accumulated in the VO2 film by the photovoltaic effect. The surface charge density is controlled successfully in a wide range of 10 9-1013 cm-2 as a function of light irradiance. The maximum hole density of 9 × 1018 cm-3 is attained at a light irradiance of 133 mW/cm2, which is estimated by assuming the uniform distribution of holes in the film. It is suggested that high efficiency can be achieved by utilizing the large dielectric constant of titanium oxide substrates.

Original languageEnglish
Pages (from-to)3049-3052
Number of pages4
JournalJournal of the Physical Society of Japan
Volume72
Issue number12
DOIs
Publication statusPublished - Dec 2003
Externally publishedYes

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injection
irradiance
photovoltaic effect
titanium oxides
ultraviolet radiation
permittivity
irradiation
room temperature

Keywords

  • Heterostructure
  • Photocarrier injection
  • TiO
  • Transition metal oxides
  • VO

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Efficiency of photocarrier injection in a VO2/TiO2 : Nb heterostructure. / Hiroi, Zenji; Yamauchi, Tohru; Muraoka, Yuji; Muramatsu, Takaki; Yamaura, Jun Ichi.

In: Journal of the Physical Society of Japan, Vol. 72, No. 12, 12.2003, p. 3049-3052.

Research output: Contribution to journalArticle

Hiroi, Zenji ; Yamauchi, Tohru ; Muraoka, Yuji ; Muramatsu, Takaki ; Yamaura, Jun Ichi. / Efficiency of photocarrier injection in a VO2/TiO2 : Nb heterostructure. In: Journal of the Physical Society of Japan. 2003 ; Vol. 72, No. 12. pp. 3049-3052.
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