Effects of tungsten doping on the CDW states of η-Mo4O11

Takashi Kambe, Shizuko Tsuboi, Nobuaki Nagao, Yoshio Nogami, Kokichi Oshima

Research output: Contribution to journalArticle

Abstract

The η-Mo4O11 system shows successive CDW transitions due to its two-dimensional Fermi surface instability. We find that the lower temperature CDW-II transition easily disappears by doping a small amount of W atoms (less than 0.2%/Mo), though the higher temperature CDW-I transition is weakly depressed. The W atoms possibly substitute both the intra- and the inter-layer Mo sites. The doping effectively reduce the carrier compensation, leading to the suppression of TCDW-I. Moreover, the interlayer coherence between the intralayer two-dimensional CDWs may be destroyed by the substitution between the layers since the modulation of CDW-II state has an interlayer component. The resistivity along the conducting plane follows "logT" dependence below 10 K, suggesting that the W atoms doped within the layer should induce the Anderson-type charge localization.

Original languageEnglish
Pages (from-to)196-197
Number of pages2
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume18
Issue number1-3
DOIs
Publication statusPublished - May 2003

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Keywords

  • η-(Mo, W)O
  • Anderson localization
  • CDW

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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