Effects of Sb-doping on Strain Relaxation of SiGe Film on Si Substrate(共著)

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)119-122
Number of pages4
JournalAIP Conference Proceedings
Volume1583
Publication statusPublished - 2014

Cite this

Effects of Sb-doping on Strain Relaxation of SiGe Film on Si Substrate(共著). / Yamashita, Yoshifumi.

In: AIP Conference Proceedings, Vol. 1583, 2014, p. 119-122.

Research output: Contribution to journalArticle

@article{f5cc9335babe4463995f20e8f158d430,
title = "Effects of Sb-doping on Strain Relaxation of SiGe Film on Si Substrate(共著)",
author = "Yoshifumi Yamashita",
year = "2014",
language = "English",
volume = "1583",
pages = "119--122",
journal = "AIP Conference Proceedings",

}

TY - JOUR

T1 - Effects of Sb-doping on Strain Relaxation of SiGe Film on Si Substrate(共著)

AU - Yamashita, Yoshifumi

PY - 2014

Y1 - 2014

M3 - Article

VL - 1583

SP - 119

EP - 122

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

ER -