Effects of Sb doping on strain relaxation in SiGe film on Si substrate

Yoshifumi Yamashita; Kan Tanemoto; Akihiro Tanaka; Tatsuya Fushimi

doi:10.1063/1.4865617

Effects of Sb doping on strain relaxation in SiGe film on Si substrate

Yoshifumi Yamashita, Kan Tanemoto, Akihiro Tanaka, Tatsuya Fushimi

Research output: Contribution to journal › Conference article › peer-review

Abstract

We studied the effects of antimony (Sb) doping on strain relaxation in a silicon-germanium (SiGe) epitaxial film on a silicon substrate. Misfit strain relaxation proceeded faster in the Sb-doped SiGe than in the undoped film. However, the degree of enhancement did not correspond to the Sb concentration of the SiGe film below 700 °C. This was not expected from the effects of Sb on the threading dislocation velocity, which is larger in SiGe films with a higher Sb concentration. The results indicate that dislocation nucleation rather than the dislocation velocity had a substantial effect at low temperatures. On the other hand, relaxation was enhanced in the heavily Sb-doped film at 900 °C. We consider that this may be attributed to the enhancing effects of dislocation motion.

Original language	English
Pages (from-to)	119-122
Number of pages	4
Journal	AIP Conference Proceedings
Volume	1583
DOIs	https://doi.org/10.1063/1.4865617
Publication status	Published - Jan 1 2014
Event	2014 IEEE International Conference on Automation Science and Engineering, CASE 2014 - Taipei, Taiwan, Province of China Duration: Aug 18 2014 → Aug 22 2014

Keywords

dislocation velocity
relaxation of misfit strain
Sb doping
silicon-germanium

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.4865617

Cite this

@article{92479b1464b3441ebf9ce806eae57578,

title = "Effects of Sb doping on strain relaxation in SiGe film on Si substrate",

abstract = "We studied the effects of antimony (Sb) doping on strain relaxation in a silicon-germanium (SiGe) epitaxial film on a silicon substrate. Misfit strain relaxation proceeded faster in the Sb-doped SiGe than in the undoped film. However, the degree of enhancement did not correspond to the Sb concentration of the SiGe film below 700 °C. This was not expected from the effects of Sb on the threading dislocation velocity, which is larger in SiGe films with a higher Sb concentration. The results indicate that dislocation nucleation rather than the dislocation velocity had a substantial effect at low temperatures. On the other hand, relaxation was enhanced in the heavily Sb-doped film at 900 °C. We consider that this may be attributed to the enhancing effects of dislocation motion.",

keywords = "dislocation velocity, relaxation of misfit strain, Sb doping, silicon-germanium",

author = "Yoshifumi Yamashita and Kan Tanemoto and Akihiro Tanaka and Tatsuya Fushimi",

year = "2014",

month = jan,

day = "1",

doi = "10.1063/1.4865617",

language = "English",

volume = "1583",

pages = "119--122",

journal = "AIP Conference Proceedings",

issn = "0094-243X",

publisher = "American Institute of Physics Publising LLC",

note = "2014 IEEE International Conference on Automation Science and Engineering, CASE 2014 ; Conference date: 18-08-2014 Through 22-08-2014",

}

TY - JOUR

T1 - Effects of Sb doping on strain relaxation in SiGe film on Si substrate

AU - Yamashita, Yoshifumi

AU - Tanemoto, Kan

AU - Tanaka, Akihiro

AU - Fushimi, Tatsuya

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We studied the effects of antimony (Sb) doping on strain relaxation in a silicon-germanium (SiGe) epitaxial film on a silicon substrate. Misfit strain relaxation proceeded faster in the Sb-doped SiGe than in the undoped film. However, the degree of enhancement did not correspond to the Sb concentration of the SiGe film below 700 °C. This was not expected from the effects of Sb on the threading dislocation velocity, which is larger in SiGe films with a higher Sb concentration. The results indicate that dislocation nucleation rather than the dislocation velocity had a substantial effect at low temperatures. On the other hand, relaxation was enhanced in the heavily Sb-doped film at 900 °C. We consider that this may be attributed to the enhancing effects of dislocation motion.

AB - We studied the effects of antimony (Sb) doping on strain relaxation in a silicon-germanium (SiGe) epitaxial film on a silicon substrate. Misfit strain relaxation proceeded faster in the Sb-doped SiGe than in the undoped film. However, the degree of enhancement did not correspond to the Sb concentration of the SiGe film below 700 °C. This was not expected from the effects of Sb on the threading dislocation velocity, which is larger in SiGe films with a higher Sb concentration. The results indicate that dislocation nucleation rather than the dislocation velocity had a substantial effect at low temperatures. On the other hand, relaxation was enhanced in the heavily Sb-doped film at 900 °C. We consider that this may be attributed to the enhancing effects of dislocation motion.

KW - dislocation velocity

KW - relaxation of misfit strain

KW - Sb doping

KW - silicon-germanium

UR - http://www.scopus.com/inward/record.url?scp=85063828230&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85063828230&partnerID=8YFLogxK

U2 - 10.1063/1.4865617

DO - 10.1063/1.4865617

M3 - Conference article

AN - SCOPUS:85063828230

SN - 0094-243X

VL - 1583

SP - 119

EP - 122

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

T2 - 2014 IEEE International Conference on Automation Science and Engineering, CASE 2014

Y2 - 18 August 2014 through 22 August 2014

ER -

Effects of Sb doping on strain relaxation in SiGe film on Si substrate

Abstract

Keywords

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