Effects of Sb doping on strain relaxation in SiGe film on Si substrate

Yoshifumi Yamashita, Kan Tanemoto, Akihiro Tanaka, Tatsuya Fushimi

Research output: Contribution to journalConference article

Abstract

We studied the effects of antimony (Sb) doping on strain relaxation in a silicon-germanium (SiGe) epitaxial film on a silicon substrate. Misfit strain relaxation proceeded faster in the Sb-doped SiGe than in the undoped film. However, the degree of enhancement did not correspond to the Sb concentration of the SiGe film below 700 °C. This was not expected from the effects of Sb on the threading dislocation velocity, which is larger in SiGe films with a higher Sb concentration. The results indicate that dislocation nucleation rather than the dislocation velocity had a substantial effect at low temperatures. On the other hand, relaxation was enhanced in the heavily Sb-doped film at 900 °C. We consider that this may be attributed to the enhancing effects of dislocation motion.

Original languageEnglish
Pages (from-to)119-122
Number of pages4
JournalAIP Conference Proceedings
Volume1583
DOIs
Publication statusPublished - Jan 1 2014
Event2014 IEEE International Conference on Automation Science and Engineering, CASE 2014 - Taipei, Taiwan, Province of China
Duration: Aug 18 2014Aug 22 2014

Keywords

  • dislocation velocity
  • relaxation of misfit strain
  • Sb doping
  • silicon-germanium

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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