Effects of oxygen annealing on dielectric properties of LuFeCuO4

Yoji Matsuo; Muneyasu Suzuki; Yuji Noguchi; Takeshi Yoshimura; Norifumi Fujimura; Kenji Yoshii; Naoshi Ikeda; Shigeo Mori

doi:10.1143/JJAP.47.8464

Effects of oxygen annealing on dielectric properties of LuFeCuO₄

Yoji Matsuo, Muneyasu Suzuki, Yuji Noguchi, Takeshi Yoshimura, Norifumi Fujimura, Kenji Yoshii, Naoshi Ikeda, Shigeo Mori

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We investigated the effect of oxygen annealing on dielectric properties of LuFeCuO₄ mainly by dielectric measurements and transmission electron microscopy experiments. It was found that the leakage current density decreases with high-pressure oxygen annealing and the size of nanodomains with orientational polarization increases, which is characterized by the short-range ordering of Fe³⁺ and Cu²⁺ ions on a triangular lattice. In addition, the absolute value of relative permittivity ε′ decreases with oxygen annealing and ε′ exhibits a broad peak in the temperature window between room temperature and 550K, which is similar to that observed in relaxor ferroelectric materials. The present experimental results suggest that the number of oxygen vacancies has a crucial effect on dielectric properties of LuFeCuO₄.

Original language	English
Pages (from-to)	8464-8467
Number of pages	4
Journal	Japanese journal of applied physics
Volume	47
Issue number	11
DOIs	https://doi.org/10.1143/JJAP.47.8464
Publication status	Published - Nov 14 2008

Keywords

Dielectric material
Oxygen annealing
Transmission electron microscopy

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.47.8464

Cite this

@article{3cbb172ea564495bbac2e99159913728,

title = "Effects of oxygen annealing on dielectric properties of LuFeCuO4",

abstract = "We investigated the effect of oxygen annealing on dielectric properties of LuFeCuO4 mainly by dielectric measurements and transmission electron microscopy experiments. It was found that the leakage current density decreases with high-pressure oxygen annealing and the size of nanodomains with orientational polarization increases, which is characterized by the short-range ordering of Fe3+ and Cu2+ ions on a triangular lattice. In addition, the absolute value of relative permittivity ε′ decreases with oxygen annealing and ε′ exhibits a broad peak in the temperature window between room temperature and 550K, which is similar to that observed in relaxor ferroelectric materials. The present experimental results suggest that the number of oxygen vacancies has a crucial effect on dielectric properties of LuFeCuO4.",

keywords = "Dielectric material, Oxygen annealing, Transmission electron microscopy",

author = "Yoji Matsuo and Muneyasu Suzuki and Yuji Noguchi and Takeshi Yoshimura and Norifumi Fujimura and Kenji Yoshii and Naoshi Ikeda and Shigeo Mori",

year = "2008",

month = nov,

day = "14",

doi = "10.1143/JJAP.47.8464",

language = "English",

volume = "47",

pages = "8464--8467",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "11",

}

TY - JOUR

T1 - Effects of oxygen annealing on dielectric properties of LuFeCuO4

AU - Matsuo, Yoji

AU - Suzuki, Muneyasu

AU - Noguchi, Yuji

AU - Yoshimura, Takeshi

AU - Fujimura, Norifumi

AU - Yoshii, Kenji

AU - Ikeda, Naoshi

AU - Mori, Shigeo

PY - 2008/11/14

Y1 - 2008/11/14

N2 - We investigated the effect of oxygen annealing on dielectric properties of LuFeCuO4 mainly by dielectric measurements and transmission electron microscopy experiments. It was found that the leakage current density decreases with high-pressure oxygen annealing and the size of nanodomains with orientational polarization increases, which is characterized by the short-range ordering of Fe3+ and Cu2+ ions on a triangular lattice. In addition, the absolute value of relative permittivity ε′ decreases with oxygen annealing and ε′ exhibits a broad peak in the temperature window between room temperature and 550K, which is similar to that observed in relaxor ferroelectric materials. The present experimental results suggest that the number of oxygen vacancies has a crucial effect on dielectric properties of LuFeCuO4.

AB - We investigated the effect of oxygen annealing on dielectric properties of LuFeCuO4 mainly by dielectric measurements and transmission electron microscopy experiments. It was found that the leakage current density decreases with high-pressure oxygen annealing and the size of nanodomains with orientational polarization increases, which is characterized by the short-range ordering of Fe3+ and Cu2+ ions on a triangular lattice. In addition, the absolute value of relative permittivity ε′ decreases with oxygen annealing and ε′ exhibits a broad peak in the temperature window between room temperature and 550K, which is similar to that observed in relaxor ferroelectric materials. The present experimental results suggest that the number of oxygen vacancies has a crucial effect on dielectric properties of LuFeCuO4.

KW - Dielectric material

KW - Oxygen annealing

KW - Transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=58749089489&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58749089489&partnerID=8YFLogxK

U2 - 10.1143/JJAP.47.8464

DO - 10.1143/JJAP.47.8464

M3 - Article

AN - SCOPUS:58749089489

VL - 47

SP - 8464

EP - 8467

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 11

ER -