Effects of hydrogen treatment on strain relaxation of SiGe epi-layer on Ge substrate

Y. Yamashita, R. Nakagawa, Y. Sakamoto, T. Ishiyama, Y. Kamiura

Research output: Contribution to journalConference article

2 Citations (Scopus)


Effects of hydrogen treatment on post-growth strain relaxation of GeSi epitaxial films on Ge substrate were studied. We found that pre-hydrogen treatment at room temperature enhanced strain relaxation during subsequent thermal treatment. We also confirmed that the relaxation enhancement effect became small as the annealing time was elongated and the temperature was raised. These results mean that the effect is more remarkable in the early stage of relaxation. In order to investigate the mechanism of this effect, threading dislocation velocity was measured. However, it was not enhanced by pre-hydrogenation. This fact strongly suggests that the relaxation enhancement effect was caused by increase of dislocation sources, which are attributed to hydrogen atoms incorporated into GeSi film.

Original languageEnglish
Pages (from-to)204-207
Number of pages4
JournalPhysica B: Condensed Matter
Issue number1
Publication statusPublished - Apr 1 2006
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: Jul 24 2005Jul 29 2005



  • Hydrogen
  • Relaxation of misfit strain
  • SiGe

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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