Effects of hydrogen treatment on strain relaxation of SiGe epi-layer on Ge substrate

Yoshifumi Yamashita, R. Nakagawa, Y. Sakamoto, T. Ishiyama, Y. Kamiura

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Effects of hydrogen treatment on post-growth strain relaxation of GeSi epitaxial films on Ge substrate were studied. We found that pre-hydrogen treatment at room temperature enhanced strain relaxation during subsequent thermal treatment. We also confirmed that the relaxation enhancement effect became small as the annealing time was elongated and the temperature was raised. These results mean that the effect is more remarkable in the early stage of relaxation. In order to investigate the mechanism of this effect, threading dislocation velocity was measured. However, it was not enhanced by pre-hydrogenation. This fact strongly suggests that the relaxation enhancement effect was caused by increase of dislocation sources, which are attributed to hydrogen atoms incorporated into GeSi film.

Original languageEnglish
Pages (from-to)204-207
Number of pages4
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - Apr 1 2006

Fingerprint

Strain relaxation
Hydrogen
Substrates
hydrogen
Epitaxial films
Hydrogenation
Heat treatment
Annealing
augmentation
Atoms
Temperature
hydrogenation
hydrogen atoms
annealing
room temperature

Keywords

  • Hydrogen
  • Relaxation of misfit strain
  • SiGe

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Effects of hydrogen treatment on strain relaxation of SiGe epi-layer on Ge substrate. / Yamashita, Yoshifumi; Nakagawa, R.; Sakamoto, Y.; Ishiyama, T.; Kamiura, Y.

In: Physica B: Condensed Matter, Vol. 376-377, No. 1, 01.04.2006, p. 204-207.

Research output: Contribution to journalArticle

Yamashita, Yoshifumi ; Nakagawa, R. ; Sakamoto, Y. ; Ishiyama, T. ; Kamiura, Y. / Effects of hydrogen treatment on strain relaxation of SiGe epi-layer on Ge substrate. In: Physica B: Condensed Matter. 2006 ; Vol. 376-377, No. 1. pp. 204-207.
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