| Original language | English |
|---|---|
| Pages (from-to) | 209-216 |
| Number of pages | 8 |
| Journal | Proc. of The Forum on the Science and Technology of Silicon Materials 2007 |
| Publication status | Published - 2007 |
Cite this
Effects of hydrogen on resistivity depth profile of SiGe/p-Si detected by spreading resistance method. / Yamashita, Yoshifumi.
In: Proc. of The Forum on the Science and Technology of Silicon Materials 2007, 2007, p. 209-216.Research output: Contribution to journal › Article
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title = "Effects of hydrogen on resistivity depth profile of SiGe/p-Si detected by spreading resistance method",
author = "Yoshifumi Yamashita",
year = "2007",
language = "English",
pages = "209--216",
journal = "Proc. of The Forum on the Science and Technology of Silicon Materials 2007",
}
TY - JOUR
T1 - Effects of hydrogen on resistivity depth profile of SiGe/p-Si detected by spreading resistance method
AU - Yamashita, Yoshifumi
PY - 2007
Y1 - 2007
M3 - Article
SP - 209
EP - 216
JO - Proc. of The Forum on the Science and Technology of Silicon Materials 2007
JF - Proc. of The Forum on the Science and Technology of Silicon Materials 2007
ER -