| Original language | English |
|---|---|
| Pages (from-to) | 209-216 |
| Number of pages | 8 |
| Journal | Proc. of The Forum on the Science and Technology of Silicon Materials 2007 |
| Publication status | Published - 2007 |
Effects of hydrogen on resistivity depth profile of SiGe/p-Si detected by spreading resistance method
Research output: Contribution to journal › Article