Effects of hydrogen on resistivity depth profile of SiGe/p-Si detected by spreading resistance method

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)209-216
Number of pages8
JournalProc. of The Forum on the Science and Technology of Silicon Materials 2007
Publication statusPublished - 2007

Cite this

@article{afed3eb85c27480e9feaed5bf560eff9,
title = "Effects of hydrogen on resistivity depth profile of SiGe/p-Si detected by spreading resistance method",
author = "Yoshifumi Yamashita",
year = "2007",
language = "English",
pages = "209--216",
journal = "Proc. of The Forum on the Science and Technology of Silicon Materials 2007",

}

TY - JOUR

T1 - Effects of hydrogen on resistivity depth profile of SiGe/p-Si detected by spreading resistance method

AU - Yamashita, Yoshifumi

PY - 2007

Y1 - 2007

M3 - Article

SP - 209

EP - 216

JO - Proc. of The Forum on the Science and Technology of Silicon Materials 2007

JF - Proc. of The Forum on the Science and Technology of Silicon Materials 2007

ER -