Effects of hydrogen on depth profile of resistivity of SiGe on Si substrate

Yoshifumi Yamashita, Yoichi Kamiura, Takaaki Miyasako, Toshiyuki Shiotani, Takeshi Ishiyama

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We report that the resistivity of SiGe films deposited on a B-doped Si substrate by solid-source molecular beam epitaxy (MBE) is reduced by postgrowth hydrogen treatment and the subsequent annealing. This effect was observed near a bevel surface finished by mechanical polishing. Therefore, the damaged surface layer played an important role in this effect. The same reduction in the resistivity of the SiGe films was also observed by intentional supplying hydrogen during film deposition. These phenomena indicate that hydrogen assists the electrical activation of boron.

Original languageEnglish
Pages (from-to)3994-3996
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number5 A
Publication statusPublished - May 9 2006


  • Boron
  • Depth profile of resistivity
  • Hydrogen
  • SIGe on Si
  • Spreading resistance

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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