Effects of hydrogen atoms on postannealing of phosphorus-ion implanted silicon

Yoshifumi Yamashita, Yoichi Kamiura, Ikuhisa Yamamoto, Takeshi Ishiyama, Yoshiyuki Sato

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effects of hydrogen atoms on postannealing of phosphorous-ion implanted silicon was analyzed. The recovery-enhancing effect of hydrogen was determined as a function of annealing temperature, dose quantity and plasma intensity. It was found that the postannealing treatment reduced the resistivity of the surface region which was very high just after the implantation.

Original languageEnglish
Pages (from-to)134-138
Number of pages5
JournalJournal of Applied Physics
Volume93
Issue number1
DOIs
Publication statusPublished - Jan 1 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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