## Abstract

We review our recent results and analyses of the effects of uniaxial compressive stress on the electronic states and atomic configurations of a platinum-dihydrogen (Pt-H_{2}) defect in Si, and discuss the results on the basis of the structural model that we proposed. We applied a technique of isothermal deep-level transient spectroscopy (IT-DLTS), combined with the application of uniaxial compressive stress. Our experiments showed that 〈1 1 1〉 and 〈1 0 0〉 stresses split the IT-DLTS peak of the Pt-H_{2} defect into two components, and a 〈1 1 0〉 stress split it into three components. Such a splitting pattern and the observed intensity ratios of split components uniquely determined that the defect had C_{2v} symmetry, on which our structural model was based. We found that the electronic levels corresponding to split components varied linearly with 〈1 1 1〉 stress. Subtracting the stress shift of the conduction band minima, we have obtained 36 ± 4 meV/GPa as a net increase in energy for the level with the higher energy with respect to the applied stress. This result strongly suggests that compressive stress raises the energy of the Pt-H_{2} level, indicating its antibonding character. We observed that the Pt-H_{2} defect was aligned above 80 K under uniaxial stress to the configuration with the higher electronic level. This indicates that the stress-induced increase of level energy was overcome by the energy gain due to electronic bonding and atomic relaxation, resulting in the decrease of the total energy of the Pt-H_{2} defect system. We found that the intensity ratio of split components of the IT-DLTS peak was described by a Boltzmann factor, where the activation energy is proportional to the magnitude of the applied stress up to 0.4 GPa with a proportional factor, 49 meV/GPa, from which we determined an element A_{3} of the piezospectroscopic tensor to be -37 meV/GPa.

Original language | English |
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Pages (from-to) | 213-217 |

Number of pages | 5 |

Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |

Volume | 134 |

Issue number | 2-3 SPEC. ISS. |

DOIs | |

Publication status | Published - Oct 15 2006 |

## Keywords

- Atomic configuration
- DLTS
- Electronic level
- Hydrogen
- Platinum
- Silicon
- Stress

## ASJC Scopus subject areas

- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering

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