Effects of compressive stress on the electronic states and atomic configurations of the Pt-H2 defect in silicon

Yoichi Kamiura, Kimihiro Sato, Yoshifumi Yamashita, Takeshi Ishiyama

Research output: Contribution to journalArticle

Abstract

We review our recent results and analyses of the effects of uniaxial compressive stress on the electronic states and atomic configurations of a platinum-dihydrogen (Pt-H2) defect in Si, and discuss the results on the basis of the structural model that we proposed. We applied a technique of isothermal deep-level transient spectroscopy (IT-DLTS), combined with the application of uniaxial compressive stress. Our experiments showed that 〈1 1 1〉 and 〈1 0 0〉 stresses split the IT-DLTS peak of the Pt-H2 defect into two components, and a 〈1 1 0〉 stress split it into three components. Such a splitting pattern and the observed intensity ratios of split components uniquely determined that the defect had C2v symmetry, on which our structural model was based. We found that the electronic levels corresponding to split components varied linearly with 〈1 1 1〉 stress. Subtracting the stress shift of the conduction band minima, we have obtained 36 ± 4 meV/GPa as a net increase in energy for the level with the higher energy with respect to the applied stress. This result strongly suggests that compressive stress raises the energy of the Pt-H2 level, indicating its antibonding character. We observed that the Pt-H2 defect was aligned above 80 K under uniaxial stress to the configuration with the higher electronic level. This indicates that the stress-induced increase of level energy was overcome by the energy gain due to electronic bonding and atomic relaxation, resulting in the decrease of the total energy of the Pt-H2 defect system. We found that the intensity ratio of split components of the IT-DLTS peak was described by a Boltzmann factor, where the activation energy is proportional to the magnitude of the applied stress up to 0.4 GPa with a proportional factor, 49 meV/GPa, from which we determined an element A3 of the piezospectroscopic tensor to be -37 meV/GPa.

Original languageEnglish
Pages (from-to)213-217
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume134
Issue number2-3 SPEC. ISS.
DOIs
Publication statusPublished - Oct 15 2006

Fingerprint

Electronic states
Silicon
Compressive stress
Defects
defects
silicon
configurations
electronics
Deep level transient spectroscopy
electronic levels
energy
Platinum
Conduction bands
spectroscopy
Electron energy levels
Tensors
Activation energy
conduction bands
platinum
energy levels

Keywords

  • Atomic configuration
  • DLTS
  • Electronic level
  • Hydrogen
  • Platinum
  • Silicon
  • Stress

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Effects of compressive stress on the electronic states and atomic configurations of the Pt-H2 defect in silicon. / Kamiura, Yoichi; Sato, Kimihiro; Yamashita, Yoshifumi; Ishiyama, Takeshi.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 134, No. 2-3 SPEC. ISS., 15.10.2006, p. 213-217.

Research output: Contribution to journalArticle

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