Effects of carbon implantation on the electrical properties of amorphous In2O3 thin film

K. Hanamoto, M. Sasaki, H. Miki, Y. Nakayama

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Carbon ions with an energy of 30 keV have been implanted into amorphous In2O3 thin films at doses of 1×1015-2×1016cm-2. After implantation the films were annealed in air and subsequently in a vacuum at 350 °C for 1 h. The electrical resistivities of carbon-implanted films decreased due to the increase in the carrier concentration. However, the whole properties were not much improved compared to a previous experiment by the use of crystalline In2O3 film as a starting material. The relation between the crystal structure and the electrical property will be discussed.

Original languageEnglish
Pages (from-to)371-377
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number3
Publication statusPublished - Nov 2001
Externally publishedYes


  • Amorphous InO
  • Carbon implantation
  • Electrical property

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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