TY - JOUR
T1 - Effects of carbon implantation on the electrical properties of amorphous In2O3 thin film
AU - Hanamoto, K.
AU - Sasaki, M.
AU - Miki, H.
AU - Nakayama, Y.
N1 - Funding Information:
This work was supported in part by the Science Research Promotion Fund from Japan Private School Promotion Foundation and by the New Energy and Industrial Technology Development Organization (NEDO).
Copyright:
Copyright 2007 Elsevier B.V., All rights reserved.
PY - 2001/11
Y1 - 2001/11
N2 - Carbon ions with an energy of 30 keV have been implanted into amorphous In2O3 thin films at doses of 1×1015-2×1016cm-2. After implantation the films were annealed in air and subsequently in a vacuum at 350 °C for 1 h. The electrical resistivities of carbon-implanted films decreased due to the increase in the carrier concentration. However, the whole properties were not much improved compared to a previous experiment by the use of crystalline In2O3 film as a starting material. The relation between the crystal structure and the electrical property will be discussed.
AB - Carbon ions with an energy of 30 keV have been implanted into amorphous In2O3 thin films at doses of 1×1015-2×1016cm-2. After implantation the films were annealed in air and subsequently in a vacuum at 350 °C for 1 h. The electrical resistivities of carbon-implanted films decreased due to the increase in the carrier concentration. However, the whole properties were not much improved compared to a previous experiment by the use of crystalline In2O3 film as a starting material. The relation between the crystal structure and the electrical property will be discussed.
KW - Amorphous InO
KW - Carbon implantation
KW - Electrical property
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U2 - 10.1016/S0168-583X(01)00788-1
DO - 10.1016/S0168-583X(01)00788-1
M3 - Article
AN - SCOPUS:0035498451
VL - 184
SP - 371
EP - 377
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 3
ER -