Effectiveness of a hot-filament chemical vapor deposition method for preparation of a boron-doped superconducting diamond film with higher superconducting transition temperature

T. Doi, T. Fukaishi, C. Hiramatsu, Takanori Wakita, M. Hirai, Yuji Muraoka, Takayoshi Yokoya, Y. Kato, Y. Izumi, T. Muro, Y. Tamenori

Research output: Contribution to journalArticle

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Abstract

We have investigated the effectiveness of a hot-filament chemical vapor deposition (HFCVD) method for preparation of a boron-doped superconducting diamond film with higher superconducting transition temperature (T c). A boron-doped superconducting diamond film has been fabricated on a diamond (111) substrate using the HFCVD method, and studied by means of scanning electron microscopy, X-ray photoelectron spectroscopy (XPS), and resistivity. The film consists of grains with an average size of 200 mm. Analyses of valence band and boron 1s core-level XPS spectra indicate the formation of boron-doped diamond film on the substrate. From the resistivity measurements, the film is found to be a superconductor with onset T c of 7.1 K. Carrier concentration determined by Hall conductivity measurements is 1.1 × 10 21 cm - 3. The value of T c is higher compared with that in boron-doped superconducting diamond films prepared by a commonly used microwave plasma-assisted chemical vapor deposition (MPCVD) method, at the same carrier concentration [A. Kawano et al., Phys. Rev. B 82 (2010) 085318]. The result of higher T c in the film by the HFCVD method is consistent with the previous one [Wang et al., Diamond Relat. Mater. 15 (2006) 659], suggesting that the HFCVD method is effective for preparation of boron-doped superconducting diamond films showing higher T c.

Original languageEnglish
Pages (from-to)5-7
Number of pages3
JournalDiamond and Related Materials
Volume25
DOIs
Publication statusPublished - May 2012

Fingerprint

Superconducting films
Boron
Diamond films
diamond films
Superconducting transition temperature
Chemical vapor deposition
filaments
boron
transition temperature
vapor deposition
preparation
Diamond
Carrier concentration
Diamonds
X ray photoelectron spectroscopy
diamonds
photoelectron spectroscopy
electrical resistivity
Core levels
Substrates

Keywords

  • Boron-doped diamond
  • Film
  • Hot-filament chemical vapor deposition
  • Superconductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Chemistry(all)

Cite this

Effectiveness of a hot-filament chemical vapor deposition method for preparation of a boron-doped superconducting diamond film with higher superconducting transition temperature. / Doi, T.; Fukaishi, T.; Hiramatsu, C.; Wakita, Takanori; Hirai, M.; Muraoka, Yuji; Yokoya, Takayoshi; Kato, Y.; Izumi, Y.; Muro, T.; Tamenori, Y.

In: Diamond and Related Materials, Vol. 25, 05.2012, p. 5-7.

Research output: Contribution to journalArticle

@article{0c0aa942380342a0bc636db163b991ab,
title = "Effectiveness of a hot-filament chemical vapor deposition method for preparation of a boron-doped superconducting diamond film with higher superconducting transition temperature",
abstract = "We have investigated the effectiveness of a hot-filament chemical vapor deposition (HFCVD) method for preparation of a boron-doped superconducting diamond film with higher superconducting transition temperature (T c). A boron-doped superconducting diamond film has been fabricated on a diamond (111) substrate using the HFCVD method, and studied by means of scanning electron microscopy, X-ray photoelectron spectroscopy (XPS), and resistivity. The film consists of grains with an average size of 200 mm. Analyses of valence band and boron 1s core-level XPS spectra indicate the formation of boron-doped diamond film on the substrate. From the resistivity measurements, the film is found to be a superconductor with onset T c of 7.1 K. Carrier concentration determined by Hall conductivity measurements is 1.1 × 10 21 cm - 3. The value of T c is higher compared with that in boron-doped superconducting diamond films prepared by a commonly used microwave plasma-assisted chemical vapor deposition (MPCVD) method, at the same carrier concentration [A. Kawano et al., Phys. Rev. B 82 (2010) 085318]. The result of higher T c in the film by the HFCVD method is consistent with the previous one [Wang et al., Diamond Relat. Mater. 15 (2006) 659], suggesting that the HFCVD method is effective for preparation of boron-doped superconducting diamond films showing higher T c.",
keywords = "Boron-doped diamond, Film, Hot-filament chemical vapor deposition, Superconductivity",
author = "T. Doi and T. Fukaishi and C. Hiramatsu and Takanori Wakita and M. Hirai and Yuji Muraoka and Takayoshi Yokoya and Y. Kato and Y. Izumi and T. Muro and Y. Tamenori",
year = "2012",
month = "5",
doi = "10.1016/j.diamond.2012.02.008",
language = "English",
volume = "25",
pages = "5--7",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",

}

TY - JOUR

T1 - Effectiveness of a hot-filament chemical vapor deposition method for preparation of a boron-doped superconducting diamond film with higher superconducting transition temperature

AU - Doi, T.

AU - Fukaishi, T.

AU - Hiramatsu, C.

AU - Wakita, Takanori

AU - Hirai, M.

AU - Muraoka, Yuji

AU - Yokoya, Takayoshi

AU - Kato, Y.

AU - Izumi, Y.

AU - Muro, T.

AU - Tamenori, Y.

PY - 2012/5

Y1 - 2012/5

N2 - We have investigated the effectiveness of a hot-filament chemical vapor deposition (HFCVD) method for preparation of a boron-doped superconducting diamond film with higher superconducting transition temperature (T c). A boron-doped superconducting diamond film has been fabricated on a diamond (111) substrate using the HFCVD method, and studied by means of scanning electron microscopy, X-ray photoelectron spectroscopy (XPS), and resistivity. The film consists of grains with an average size of 200 mm. Analyses of valence band and boron 1s core-level XPS spectra indicate the formation of boron-doped diamond film on the substrate. From the resistivity measurements, the film is found to be a superconductor with onset T c of 7.1 K. Carrier concentration determined by Hall conductivity measurements is 1.1 × 10 21 cm - 3. The value of T c is higher compared with that in boron-doped superconducting diamond films prepared by a commonly used microwave plasma-assisted chemical vapor deposition (MPCVD) method, at the same carrier concentration [A. Kawano et al., Phys. Rev. B 82 (2010) 085318]. The result of higher T c in the film by the HFCVD method is consistent with the previous one [Wang et al., Diamond Relat. Mater. 15 (2006) 659], suggesting that the HFCVD method is effective for preparation of boron-doped superconducting diamond films showing higher T c.

AB - We have investigated the effectiveness of a hot-filament chemical vapor deposition (HFCVD) method for preparation of a boron-doped superconducting diamond film with higher superconducting transition temperature (T c). A boron-doped superconducting diamond film has been fabricated on a diamond (111) substrate using the HFCVD method, and studied by means of scanning electron microscopy, X-ray photoelectron spectroscopy (XPS), and resistivity. The film consists of grains with an average size of 200 mm. Analyses of valence band and boron 1s core-level XPS spectra indicate the formation of boron-doped diamond film on the substrate. From the resistivity measurements, the film is found to be a superconductor with onset T c of 7.1 K. Carrier concentration determined by Hall conductivity measurements is 1.1 × 10 21 cm - 3. The value of T c is higher compared with that in boron-doped superconducting diamond films prepared by a commonly used microwave plasma-assisted chemical vapor deposition (MPCVD) method, at the same carrier concentration [A. Kawano et al., Phys. Rev. B 82 (2010) 085318]. The result of higher T c in the film by the HFCVD method is consistent with the previous one [Wang et al., Diamond Relat. Mater. 15 (2006) 659], suggesting that the HFCVD method is effective for preparation of boron-doped superconducting diamond films showing higher T c.

KW - Boron-doped diamond

KW - Film

KW - Hot-filament chemical vapor deposition

KW - Superconductivity

UR - http://www.scopus.com/inward/record.url?scp=84863416511&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863416511&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2012.02.008

DO - 10.1016/j.diamond.2012.02.008

M3 - Article

AN - SCOPUS:84863416511

VL - 25

SP - 5

EP - 7

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

ER -