Effect of the HfO2 passivation on HfS2 Transistors

T. Kanazawa, T. Amemiya, V. Upadhyaya, A. Ishikawa, Kenji Tsuruta, T. Tanaka, Y. Miyamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Hafnium Disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have high electron mobility and finite bandgap. However, the fabrication process for HfS2 based electron devices has not been established, and it is required to bring out the superior transport properties of HfS2. In this report, we have investigated the effects of ALD HfO2 passivation on the current properties of HfS2 Transistors. HfO2 passivation of HfS2 surface achieved the improvement in drain current and significant reduction of hysteresis. The charge trapping at the outermost surface seems to be the dominant factor for degradation of the current stability.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages865-867
Number of pages3
ISBN (Electronic)9781509039142
DOIs
Publication statusPublished - Nov 21 2016
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: Aug 22 2016Aug 25 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period8/22/168/25/16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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    Kanazawa, T., Amemiya, T., Upadhyaya, V., Ishikawa, A., Tsuruta, K., Tanaka, T., & Miyamoto, Y. (2016). Effect of the HfO2 passivation on HfS2 Transistors. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 865-867). [7751508] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751508