TY - GEN
T1 - Effect of the HfO2 passivation on HfS2 Transistors
AU - Kanazawa, T.
AU - Amemiya, T.
AU - Upadhyaya, V.
AU - Ishikawa, Atsushi
AU - Tsuruta, K.
AU - Tanaka, T.
AU - Miyamoto, Y.
N1 - Funding Information:
This work was supported by Strategic Information and Communications R&D Promotion Programme (SCOPE) of MIC Japan and JSPS KAKENHI (Grant Number 16H00905).
Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/21
Y1 - 2016/11/21
N2 - Hafnium Disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have high electron mobility and finite bandgap. However, the fabrication process for HfS2 based electron devices has not been established, and it is required to bring out the superior transport properties of HfS2. In this report, we have investigated the effects of ALD HfO2 passivation on the current properties of HfS2 Transistors. HfO2 passivation of HfS2 surface achieved the improvement in drain current and significant reduction of hysteresis. The charge trapping at the outermost surface seems to be the dominant factor for degradation of the current stability.
AB - Hafnium Disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have high electron mobility and finite bandgap. However, the fabrication process for HfS2 based electron devices has not been established, and it is required to bring out the superior transport properties of HfS2. In this report, we have investigated the effects of ALD HfO2 passivation on the current properties of HfS2 Transistors. HfO2 passivation of HfS2 surface achieved the improvement in drain current and significant reduction of hysteresis. The charge trapping at the outermost surface seems to be the dominant factor for degradation of the current stability.
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U2 - 10.1109/NANO.2016.7751508
DO - 10.1109/NANO.2016.7751508
M3 - Conference contribution
AN - SCOPUS:85006918721
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 865
EP - 867
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Y2 - 22 August 2016 through 25 August 2016
ER -