Effect of the HfO2 passivation on HfS2 Transistors

T. Kanazawa; T. Amemiya; V. Upadhyaya; A. Ishikawa; K. Tsuruta; T. Tanaka; Y. Miyamoto

doi:10.1109/NANO.2016.7751508

Effect of the HfO₂ passivation on HfS₂ Transistors

T. Kanazawa, T. Amemiya, V. Upadhyaya, A. Ishikawa, K. Tsuruta, T. Tanaka, Y. Miyamoto

Graduate School of Natural Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Hafnium Disulfide (HfS₂) is one of the transition metal dichalcogenides which is expected to have high electron mobility and finite bandgap. However, the fabrication process for HfS₂ based electron devices has not been established, and it is required to bring out the superior transport properties of HfS₂. In this report, we have investigated the effects of ALD HfO₂ passivation on the current properties of HfS₂ Transistors. HfO₂ passivation of HfS₂ surface achieved the improvement in drain current and significant reduction of hysteresis. The charge trapping at the outermost surface seems to be the dominant factor for degradation of the current stability.

Original language	English
Title of host publication	16th International Conference on Nanotechnology - IEEE NANO 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	865-867
Number of pages	3
ISBN (Electronic)	9781509039142
DOIs	https://doi.org/10.1109/NANO.2016.7751508
Publication status	Published - Nov 21 2016
Event	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan Duration: Aug 22 2016 → Aug 25 2016

Publication series

Name	16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Country	Japan
City	Sendai
Period	8/22/16 → 8/25/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/NANO.2016.7751508

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Cite this

Kanazawa, T., Amemiya, T., Upadhyaya, V., Ishikawa, A., Tsuruta, K., Tanaka, T., & Miyamoto, Y. (2016). Effect of the HfO₂ passivation on HfS₂ Transistors. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 865-867). [7751508] (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751508

Effect of the HfO₂ passivation on HfS₂ Transistors. / Kanazawa, T.; Amemiya, T.; Upadhyaya, V.; Ishikawa, A.; Tsuruta, K.; Tanaka, T.; Miyamoto, Y.

16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 865-867 7751508 (16th International Conference on Nanotechnology - IEEE NANO 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kanazawa, T, Amemiya, T, Upadhyaya, V, Ishikawa, A, Tsuruta, K, Tanaka, T & Miyamoto, Y 2016, Effect of the HfO₂ passivation on HfS₂ Transistors. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751508, 16th International Conference on Nanotechnology - IEEE NANO 2016, Institute of Electrical and Electronics Engineers Inc., pp. 865-867, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 8/22/16. https://doi.org/10.1109/NANO.2016.7751508

Kanazawa T, Amemiya T, Upadhyaya V, Ishikawa A, Tsuruta K, Tanaka T et al. Effect of the HfO₂ passivation on HfS₂ Transistors. In 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 865-867. 7751508. (16th International Conference on Nanotechnology - IEEE NANO 2016). https://doi.org/10.1109/NANO.2016.7751508

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abstract = "Hafnium Disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have high electron mobility and finite bandgap. However, the fabrication process for HfS2 based electron devices has not been established, and it is required to bring out the superior transport properties of HfS2. In this report, we have investigated the effects of ALD HfO2 passivation on the current properties of HfS2 Transistors. HfO2 passivation of HfS2 surface achieved the improvement in drain current and significant reduction of hysteresis. The charge trapping at the outermost surface seems to be the dominant factor for degradation of the current stability.",

author = "T. Kanazawa and T. Amemiya and V. Upadhyaya and A. Ishikawa and K. Tsuruta and T. Tanaka and Y. Miyamoto",

note = "Funding Information: This work was supported by Strategic Information and Communications R&D Promotion Programme (SCOPE) of MIC Japan and JSPS KAKENHI (Grant Number 16H00905).; 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 ; Conference date: 22-08-2016 Through 25-08-2016",

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AU - Tsuruta, K.

AU - Tanaka, T.

AU - Miyamoto, Y.

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AB - Hafnium Disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have high electron mobility and finite bandgap. However, the fabrication process for HfS2 based electron devices has not been established, and it is required to bring out the superior transport properties of HfS2. In this report, we have investigated the effects of ALD HfO2 passivation on the current properties of HfS2 Transistors. HfO2 passivation of HfS2 surface achieved the improvement in drain current and significant reduction of hysteresis. The charge trapping at the outermost surface seems to be the dominant factor for degradation of the current stability.

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