Abstract
Hafnium Disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have high electron mobility and finite bandgap. However, the fabrication process for HfS2 based electron devices has not been established, and it is required to bring out the superior transport properties of HfS2. In this report, we have investigated the effects of ALD HfO2 passivation on the current properties of HfS2 Transistors. HfO2 passivation of HfS2 surface achieved the improvement in drain current and significant reduction of hysteresis. The charge trapping at the outermost surface seems to be the dominant factor for degradation of the current stability.
Original language | English |
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Title of host publication | 16th International Conference on Nanotechnology - IEEE NANO 2016 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 865-867 |
Number of pages | 3 |
ISBN (Electronic) | 9781509039142 |
DOIs | |
Publication status | Published - Nov 21 2016 |
Event | 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan Duration: Aug 22 2016 → Aug 25 2016 |
Other
Other | 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 |
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Country | Japan |
City | Sendai |
Period | 8/22/16 → 8/25/16 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics