Raman scattering of metastable phases of Si and Ge was performed in the pressure range 0 to 10 GPa. The results for Si are discussed in terms of the previously proposed BC8 and R8 structures. The first Raman spectrum of ST12-Ge is also reported. We suggest that photochemically-induced changes in ST12-Ge can explain the discrepancies among previous studies on metastable Ge phases.
|Number of pages||8|
|Journal||Physica Status Solidi (B) Basic Research|
|Publication status||Published - Jan 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics