Effect of Ni doping on the electro-optic property in K(Ta0.6Nb0.4)O3 films

Xueyou Yuan, Yuji Sakurai, Shinya Kondo, Masahito Yoshino, Takanori Nagasaki, Tomoaki Yamada

Research output: Contribution to journalArticlepeer-review

Abstract

The rising of thin-film-based plasmonic electro-optic (EO) devices triggers considerable exploitation of ferroelectric oxide thin films with large EO response. In this study, epitaxial (001)-orientated Ni-doped K(Ta0.6Nb0.4)O3 (KTN) films were fabricated on SrRuO3/SrTiO3 substrates via pulsed laser deposition. In comparison with a pure KTN film, a larger withstand electric field was achieved by Ni doping. The EO measurements revealed that the doping of Ni ions induced a decrease in the effective EO coefficient. Instead, the variation of refractive index by the applicable maximum electric field was increased due to the increment of withstand electric field, particularly for the case of 2% Ni dopant.

Original languageEnglish
Article numberSN1005
JournalJapanese journal of applied physics
Volume61
Issue numberSN
DOIs
Publication statusPublished - Nov 1 2022

Keywords

  • electro-optic
  • ferroelectric
  • pockels effect
  • thin films

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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