Effect of low-energy ion bombardment upon field-stimulated exoelectron emission from tungsten surfaces

Tadashi Shiota, Sinji Kibi, Ryo Yamamoto, Masahito Tagawa, Nobuo Ohmae, Masataka Umeno

Research output: Contribution to journalArticle

Abstract

The field-stimulated exoelectron emission (FSEE) from a tungsten surface bombarded by helium ions with incident energies ranging from 300 to 580 eV was investigated. When a tip was cooled down to 185 K, FSEE was clearly detected at the ion-bombarded tungsten surface with incident energies higher than 500 eV which corresponds to the sputtering threshold of tungsten atoms. A decay of FSEE intensity was also observed after the ion bombardment. In contrast, FSEE was not obvious at the tip temperature of 300 K. These experimental results would be explained by the emission model which is related to a rearrangement of surface tungsten atoms distorted by the ion bombardment.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume39
Issue number2 A
DOIs
Publication statusPublished - Jan 1 2000
Externally publishedYes

Fingerprint

Stimulated emission
Ion bombardment
stimulated emission
Tungsten
bombardment
field emission
tungsten
ions
Atoms
energy
helium ions
Ions
Helium
Sputtering
atoms
sputtering
thresholds
decay
Temperature
temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Effect of low-energy ion bombardment upon field-stimulated exoelectron emission from tungsten surfaces. / Shiota, Tadashi; Kibi, Sinji; Yamamoto, Ryo; Tagawa, Masahito; Ohmae, Nobuo; Umeno, Masataka.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 39, No. 2 A, 01.01.2000.

Research output: Contribution to journalArticle

Shiota, Tadashi ; Kibi, Sinji ; Yamamoto, Ryo ; Tagawa, Masahito ; Ohmae, Nobuo ; Umeno, Masataka. / Effect of low-energy ion bombardment upon field-stimulated exoelectron emission from tungsten surfaces. In: Japanese Journal of Applied Physics, Part 2: Letters. 2000 ; Vol. 39, No. 2 A.
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