Abstract
Chemical vapor deposition (CVD) on substrates with low C solubility such as Cu and Au is promising to grow monolayer graphene selectively in a large scale. Hydrogen is often added to control the domain size of graphene on Cu, while Au does not require H2 since Ar is inert against oxidation. The effect of H2 should be revealed to improve the quality of graphene on Au. Here we report the effect of H2 on the CVD growth of graphene on Au substrates using in situ radiation-mode optical microscopy. The in situ observation and ex situ Raman spectroscopy revealed that whether H2 was supplied or not strongly affected the growth rate, thermal radiation contrast, and compressive strain of graphene on Au. We attributed these features to the surface reconstruction of Au(001) depending on H2 supply. Our results are essential to achieve the graphene growth with high quality on Au for future applications.
| Original language | English |
|---|---|
| Article number | SIIB17 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 58 |
| Issue number | SI |
| DOIs | |
| Publication status | Published - Jan 1 2019 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Effect of hydrogen on chemical vapor deposition growth of graphene on Au substrates. / Terasawa, Tomo O.; Taira, Takanobu; Yasuda, Satoshi; Obata, Seiji; Saiki, Koichiro; Asaoka, Hidehito.
In: Japanese Journal of Applied Physics, Vol. 58, No. SI, SIIB17, 01.01.2019.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of hydrogen on chemical vapor deposition growth of graphene on Au substrates
AU - Terasawa, Tomo O.
AU - Taira, Takanobu
AU - Yasuda, Satoshi
AU - Obata, Seiji
AU - Saiki, Koichiro
AU - Asaoka, Hidehito
PY - 2019/1/1
Y1 - 2019/1/1
N2 - Chemical vapor deposition (CVD) on substrates with low C solubility such as Cu and Au is promising to grow monolayer graphene selectively in a large scale. Hydrogen is often added to control the domain size of graphene on Cu, while Au does not require H2 since Ar is inert against oxidation. The effect of H2 should be revealed to improve the quality of graphene on Au. Here we report the effect of H2 on the CVD growth of graphene on Au substrates using in situ radiation-mode optical microscopy. The in situ observation and ex situ Raman spectroscopy revealed that whether H2 was supplied or not strongly affected the growth rate, thermal radiation contrast, and compressive strain of graphene on Au. We attributed these features to the surface reconstruction of Au(001) depending on H2 supply. Our results are essential to achieve the graphene growth with high quality on Au for future applications.
AB - Chemical vapor deposition (CVD) on substrates with low C solubility such as Cu and Au is promising to grow monolayer graphene selectively in a large scale. Hydrogen is often added to control the domain size of graphene on Cu, while Au does not require H2 since Ar is inert against oxidation. The effect of H2 should be revealed to improve the quality of graphene on Au. Here we report the effect of H2 on the CVD growth of graphene on Au substrates using in situ radiation-mode optical microscopy. The in situ observation and ex situ Raman spectroscopy revealed that whether H2 was supplied or not strongly affected the growth rate, thermal radiation contrast, and compressive strain of graphene on Au. We attributed these features to the surface reconstruction of Au(001) depending on H2 supply. Our results are essential to achieve the graphene growth with high quality on Au for future applications.
UR - http://www.scopus.com/inward/record.url?scp=85072828254&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85072828254&partnerID=8YFLogxK
U2 - 10.7567/1347-4065/ab19ae
DO - 10.7567/1347-4065/ab19ae
M3 - Article
AN - SCOPUS:85072828254
VL - 58
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - SI
M1 - SIIB17
ER -