Effect of Hot-Electron Injection on High-Frequency Characteristics of Abrupt In0.52(Ga1–xAlx)0.48AS/InGaAs HBT’s

Hideki Fukano; Yoshifumi Takanashi; Masatomo Fujimoto

doi:10.1109/16.123469

Effect of Hot-Electron Injection on High-Frequency Characteristics of Abrupt In_0.52(Ga_1–xAl_x)_0.48AS/InGaAs HBT’s

Hideki Fukano, Yoshifumi Takanashi, Masatomo Fujimoto

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The effect of hot-electron injection energy (E_i) into the base on the high-frequency characteristics of In_0.52(Ga_1-xAl_x)_0.48As/InGaAs abrupt heterojunction bipolar transistors (HBT’s) is investigated by changing the composition of the emitter. It is found that there exists an optimum E_i at which a maximum current gain cutoff frequency (f_T) is obtained. Analysis of hot-electron transport in the base and collector by Monte Carlo simulation is carried out to understand the above phenomenon. The collector transit time (t _c) increases with E_ibecause electrons with higher energy transfer from the T valley into the upper L and X valleys. At first, the base transit time (T_b) decreases with E_iat the low E_i region. However, r_bdoes not decrease monotonically with E_ifor high E_i, because of the large nonparabolicity in the energy-band structure of InGaAs. Consequently, there exists a minimum in the sum of T_band T_c’in other words a maximum fT, at an intermediate value of E_i.

Original language	English
Pages (from-to)	500-506
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	39
Issue number	3
DOIs	https://doi.org/10.1109/16.123469
Publication status	Published - Mar 1992
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Effect of Hot-Electron Injection on High-Frequency Characteristics of Abrupt In0.52(Ga1–xAlx)0.48AS/InGaAs HBT{\textquoteright}s",

abstract = "The effect of hot-electron injection energy (Ei) into the base on the high-frequency characteristics of In0.52(Ga1-xAlx)0.48As/InGaAs abrupt heterojunction bipolar transistors (HBT{\textquoteright}s) is investigated by changing the composition of the emitter. It is found that there exists an optimum Ei at which a maximum current gain cutoff frequency (fT) is obtained. Analysis of hot-electron transport in the base and collector by Monte Carlo simulation is carried out to understand the above phenomenon. The collector transit time (t c) increases with Eibecause electrons with higher energy transfer from the T valley into the upper L and X valleys. At first, the base transit time (Tb) decreases with Eiat the low Ei region. However, rbdoes not decrease monotonically with Eifor high Ei, because of the large nonparabolicity in the energy-band structure of InGaAs. Consequently, there exists a minimum in the sum of Tband Tc{\textquoteright}in other words a maximum fT, at an intermediate value of Ei.",

author = "Hideki Fukano and Yoshifumi Takanashi and Masatomo Fujimoto",

year = "1992",

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doi = "10.1109/16.123469",

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AU - Fukano, Hideki

AU - Takanashi, Yoshifumi

AU - Fujimoto, Masatomo

PY - 1992/3

Y1 - 1992/3

N2 - The effect of hot-electron injection energy (Ei) into the base on the high-frequency characteristics of In0.52(Ga1-xAlx)0.48As/InGaAs abrupt heterojunction bipolar transistors (HBT’s) is investigated by changing the composition of the emitter. It is found that there exists an optimum Ei at which a maximum current gain cutoff frequency (fT) is obtained. Analysis of hot-electron transport in the base and collector by Monte Carlo simulation is carried out to understand the above phenomenon. The collector transit time (t c) increases with Eibecause electrons with higher energy transfer from the T valley into the upper L and X valleys. At first, the base transit time (Tb) decreases with Eiat the low Ei region. However, rbdoes not decrease monotonically with Eifor high Ei, because of the large nonparabolicity in the energy-band structure of InGaAs. Consequently, there exists a minimum in the sum of Tband Tc’in other words a maximum fT, at an intermediate value of Ei.

AB - The effect of hot-electron injection energy (Ei) into the base on the high-frequency characteristics of In0.52(Ga1-xAlx)0.48As/InGaAs abrupt heterojunction bipolar transistors (HBT’s) is investigated by changing the composition of the emitter. It is found that there exists an optimum Ei at which a maximum current gain cutoff frequency (fT) is obtained. Analysis of hot-electron transport in the base and collector by Monte Carlo simulation is carried out to understand the above phenomenon. The collector transit time (t c) increases with Eibecause electrons with higher energy transfer from the T valley into the upper L and X valleys. At first, the base transit time (Tb) decreases with Eiat the low Ei region. However, rbdoes not decrease monotonically with Eifor high Ei, because of the large nonparabolicity in the energy-band structure of InGaAs. Consequently, there exists a minimum in the sum of Tband Tc’in other words a maximum fT, at an intermediate value of Ei.

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Effect of Hot-Electron Injection on High-Frequency Characteristics of Abrupt In_0.52(Ga_1–xAl_x)_0.48AS/InGaAs HBT’s

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