Abstract
The effect of hot-electron injection energy (Ei) into the base on the high-frequency characteristics of In0.52(Ga1-xAlx)0.48As/InGaAs abrupt heterojunction bipolar transistors (HBT’s) is investigated by changing the composition of the emitter. It is found that there exists an optimum Ei at which a maximum current gain cutoff frequency (fT) is obtained. Analysis of hot-electron transport in the base and collector by Monte Carlo simulation is carried out to understand the above phenomenon. The collector transit time (t c) increases with Eibecause electrons with higher energy transfer from the T valley into the upper L and X valleys. At first, the base transit time (Tb) decreases with Eiat the low Ei region. However, rbdoes not decrease monotonically with Eifor high Ei, because of the large nonparabolicity in the energy-band structure of InGaAs. Consequently, there exists a minimum in the sum of Tband Tc’in other words a maximum fT, at an intermediate value of Ei.
| Original language | English |
|---|---|
| Pages (from-to) | 500-506 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 39 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1992 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy (miscellaneous)
Cite this
Effect of Hot-Electron Injection on High-Frequency Characteristics of Abrupt In0.52(Ga1–xAlx)0.48AS/InGaAs HBT’s. / Fukano, Hideki; Takanashi, Yoshifumi; Fujimoto, Masatomo.
In: IEEE Transactions on Electron Devices, Vol. 39, No. 3, 1992, p. 500-506.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of Hot-Electron Injection on High-Frequency Characteristics of Abrupt In0.52(Ga1–xAlx)0.48AS/InGaAs HBT’s
AU - Fukano, Hideki
AU - Takanashi, Yoshifumi
AU - Fujimoto, Masatomo
PY - 1992
Y1 - 1992
N2 - The effect of hot-electron injection energy (Ei) into the base on the high-frequency characteristics of In0.52(Ga1-xAlx)0.48As/InGaAs abrupt heterojunction bipolar transistors (HBT’s) is investigated by changing the composition of the emitter. It is found that there exists an optimum Ei at which a maximum current gain cutoff frequency (fT) is obtained. Analysis of hot-electron transport in the base and collector by Monte Carlo simulation is carried out to understand the above phenomenon. The collector transit time (t c) increases with Eibecause electrons with higher energy transfer from the T valley into the upper L and X valleys. At first, the base transit time (Tb) decreases with Eiat the low Ei region. However, rbdoes not decrease monotonically with Eifor high Ei, because of the large nonparabolicity in the energy-band structure of InGaAs. Consequently, there exists a minimum in the sum of Tband Tc’in other words a maximum fT, at an intermediate value of Ei.
AB - The effect of hot-electron injection energy (Ei) into the base on the high-frequency characteristics of In0.52(Ga1-xAlx)0.48As/InGaAs abrupt heterojunction bipolar transistors (HBT’s) is investigated by changing the composition of the emitter. It is found that there exists an optimum Ei at which a maximum current gain cutoff frequency (fT) is obtained. Analysis of hot-electron transport in the base and collector by Monte Carlo simulation is carried out to understand the above phenomenon. The collector transit time (t c) increases with Eibecause electrons with higher energy transfer from the T valley into the upper L and X valleys. At first, the base transit time (Tb) decreases with Eiat the low Ei region. However, rbdoes not decrease monotonically with Eifor high Ei, because of the large nonparabolicity in the energy-band structure of InGaAs. Consequently, there exists a minimum in the sum of Tband Tc’in other words a maximum fT, at an intermediate value of Ei.
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UR - http://www.scopus.com/inward/citedby.url?scp=0026837729&partnerID=8YFLogxK
U2 - 10.1109/16.123469
DO - 10.1109/16.123469
M3 - Article
AN - SCOPUS:0026837729
VL - 39
SP - 500
EP - 506
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 3
ER -