Effect of Hot-Electron Injection on High-Frequency Characteristics of Abrupt In0.52(Ga1–xAlx)0.48AS/InGaAs HBT’s

Hideki Fukano, Yoshifumi Takanashi, Masatomo Fujimoto

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The effect of hot-electron injection energy (Ei) into the base on the high-frequency characteristics of In0.52(Ga1-xAlx)0.48As/InGaAs abrupt heterojunction bipolar transistors (HBT’s) is investigated by changing the composition of the emitter. It is found that there exists an optimum Ei at which a maximum current gain cutoff frequency (fT) is obtained. Analysis of hot-electron transport in the base and collector by Monte Carlo simulation is carried out to understand the above phenomenon. The collector transit time (t c) increases with Eibecause electrons with higher energy transfer from the T valley into the upper L and X valleys. At first, the base transit time (Tb) decreases with Eiat the low Ei region. However, rbdoes not decrease monotonically with Eifor high Ei, because of the large nonparabolicity in the energy-band structure of InGaAs. Consequently, there exists a minimum in the sum of Tband Tc’in other words a maximum fT, at an intermediate value of Ei.

Original languageEnglish
Pages (from-to)500-506
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume39
Issue number3
DOIs
Publication statusPublished - 1992
Externally publishedYes

Fingerprint

Electron injection
Hot electrons
Heterojunction bipolar transistors
bipolar transistors
hot electrons
heterojunctions
injection
transit time
electrons
Band structure
accumulators
valleys
energy
Cutoff frequency
Energy transfer
energy bands
emitters
cut-off
energy transfer
Electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Effect of Hot-Electron Injection on High-Frequency Characteristics of Abrupt In0.52(Ga1–xAlx)0.48AS/InGaAs HBT’s. / Fukano, Hideki; Takanashi, Yoshifumi; Fujimoto, Masatomo.

In: IEEE Transactions on Electron Devices, Vol. 39, No. 3, 1992, p. 500-506.

Research output: Contribution to journalArticle

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