Effect of deposition conditions and buffer layers on amorphous or polytype phase formation in Al2O3 thin films by chemical vapor deposition using tri-methyl aluminum

Chunfu Lin, Takashi Tanaka, Akio Nishiyama, Tadashi Shiota, Osamu Sakurai, Naoki Wakiya, Kazuo Shinozaki, Kouichi Yasuda

Research output: Contribution to journalArticle


Al2O3 thin films were deposited on (001)Si substrate through Cr2O3/yttria-stabilized-zirconia (YSZ) buffer layer by cold-wall type chemical vapor deposition method with tri-methyl aluminum as a raw material. By changing the deposition temperature, different polytypes of Al2O3 thin films were formed. At lower temperatures (11231173 K),

Original languageEnglish
Pages (from-to)443-450
Number of pages8
JournalJournal of the Ceramic Society of Japan
Issue number6
Publication statusPublished - Jun 2019



  • Alumina
  • Buffer layer
  • CVD
  • Epitaxial growth
  • Polytype
  • Thin film

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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