Effect of defects in ferromagnetic C doped ZnO thin films

Munisamy Subramanian, Yuhei Akaike, Yasuhiko Hayashi, Masaki Tanemura, Hiroshi Ebisu, Daniel Lau Shu Ping

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The present work investigates the relation between ferromagnetism and intrinsic defects of C-doped ZnO thin films. The room-temperature ferromagnetism (RTFM) in C-doped ZnO is due to the charge transfer between Zn 4s and C 2p orbitals. The long-range magnetic interaction in C-doped ZnO is due to carbon-carbon interaction mediated by oxygen. The oxygen- and zinc-related defects in C-doped ZnO affect the mediation of ferromagnetic interaction and the existence of hybridization between Zn and C, respectively.

Original languageEnglish
Pages (from-to)1254-1257
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume249
Issue number6
DOIs
Publication statusPublished - Jun 2012
Externally publishedYes

Keywords

  • Defects
  • Magnetic properties
  • Magnetic semiconductors
  • SQUID
  • Zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Effect of defects in ferromagnetic C doped ZnO thin films'. Together they form a unique fingerprint.

  • Cite this

    Subramanian, M., Akaike, Y., Hayashi, Y., Tanemura, M., Ebisu, H., & Ping, D. L. S. (2012). Effect of defects in ferromagnetic C doped ZnO thin films. Physica Status Solidi (B) Basic Research, 249(6), 1254-1257. https://doi.org/10.1002/pssb.201147609