Effect of chelating agents on high resolution electron beam nanolithography of spin-coatable A1₂O₃ gel films

Engineering & Materials Science

• Nanolithography 100%
• Chelation 90%
• Electron beams 69%
• Gels 61%
• Aluminum oxide 49%
• Electron cyclotron resonance 13%
• Plasma etching 10%
• Linewidth 9%
• Polysilicon 8%
• Etching 7%
• Plasmas 6%
• Moisture 6%
• Temperature 5%
• Aluminum 5%

Physics & Astronomy

• acetylacetone 46%
• gels 45%
• electron beams 42%
• high resolution 35%
• baking 18%
• sensitivity 8%
• plasma etching 8%
• electron cyclotron resonance 8%
• attack 7%
• moisture 7%
• etching 5%
• atmospheres 5%
• aluminum 5%
• temperature 4%
• cross sections 4%