Effect of chelating agents on high resolution electron beam nanolithography of spin-coatable A12O3 gel films

Mohammad S.M. Saifullah, Hideo Namatsu, Toni Yamaguchi, Kenji Yamazaki, Kenji Kurihara

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The effect of chelating agents on the electron beam exposure characteristics as well as environmental stability of the spin-coatable A12O3 gel films is discussed. It was found that the A12O3 gel films prepared by reacting aluminium tri-sec-butoxide, Al(OBu5)3, with acetylacetone (AcAc), AcAc/Al2O3, gave better environmental stability and patterning characteristic than the gel films prepared by reacting the Al(OBu5)3 with ethylacetoacetate (EAcAc), EAcAc/Al2O3. The latter suffered from a faster moisture attack in the laboratory atmosphere. Both EAcAc/Al2O3 and AcAc/Al2O3 films are ∼106 times more electron beam sensitive than sputtered AlOx films, thus bringing the formers' sensitivity very close to some of the organic electron beam resists. It was seen that the baking temperature up to 70°C has almost no effect on either the sensitivity or the contrast in both the films; but it has a significant effect on the developing characteristics. Electron beam nanolithography gave 20nm linewidth with a rectangular cross-section in both EAcAc/Al2O3 and AcAc/Al2O3 films. It was observed that the etching characteristics of Al2O3 films in the electron cyclotron resonance (ECR) plasma are dependent upon the final baking temperature of the developed pattern. Preliminary plasma etching studies show that 15 nm lines on polysilicon can be etched.

Original languageEnglish
Pages (from-to)7052-7058
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number12 B
DOIs
Publication statusPublished - 1999

Keywords

  • AlO gel films
  • Chelating agents
  • Electron beam nanolithography
  • Nanopatterning

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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