Abstract
The authors propose a novel edge-illuminated refracting-facet photodiode (RFPD), where the incident light parallel to the up-side surface is refracted at an angled facet and absorbed in a thin absorption layer. Fabricated RFPDs with an absorption layer thickness of 1.5μm show a responsivity as high as 0.96A/W even at a bias voltage of 0.5V for a flat-ended singlemode fibre.
| Original language | English |
|---|---|
| Pages (from-to) | 2346-2348 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 32 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - Dec 5 1996 |
| Externally published | Yes |
Keywords
- Photodiodes
- Planar lightwave circuits
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Fukano, H., Kozen, A., Kato, K., & Nakajima, O. (1996). Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage. Electronics Letters, 32(25), 2346-2348. https://doi.org/10.1049/el:19961590