Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage

H. Fukano; A. Kozen; K. Kato; O. Nakajima

doi:10.1049/el:19961590

Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage

H. Fukano, A. Kozen, K. Kato, O. Nakajima

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The authors propose a novel edge-illuminated refracting-facet photodiode (RFPD), where the incident light parallel to the up-side surface is refracted at an angled facet and absorbed in a thin absorption layer. Fabricated RFPDs with an absorption layer thickness of 1.5μm show a responsivity as high as 0.96A/W even at a bias voltage of 0.5V for a flat-ended singlemode fibre.

Original language	English
Pages (from-to)	2346-2348
Number of pages	3
Journal	Electronics Letters
Volume	32
Issue number	25
DOIs	https://doi.org/10.1049/el:19961590
Publication status	Published - Dec 5 1996
Externally published	Yes

Keywords

Photodiodes
Planar lightwave circuits

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19961590

Cite this

@article{76eeb4dde92247a59c6f2457a0a23a76,

title = "Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage",

abstract = "The authors propose a novel edge-illuminated refracting-facet photodiode (RFPD), where the incident light parallel to the up-side surface is refracted at an angled facet and absorbed in a thin absorption layer. Fabricated RFPDs with an absorption layer thickness of 1.5μm show a responsivity as high as 0.96A/W even at a bias voltage of 0.5V for a flat-ended singlemode fibre.",

keywords = "Photodiodes, Planar lightwave circuits",

author = "H. Fukano and A. Kozen and K. Kato and O. Nakajima",

year = "1996",

month = dec,

day = "5",

doi = "10.1049/el:19961590",

language = "English",

volume = "32",

pages = "2346--2348",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "25",

}

TY - JOUR

T1 - Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage

AU - Fukano, H.

AU - Kozen, A.

AU - Kato, K.

AU - Nakajima, O.

PY - 1996/12/5

Y1 - 1996/12/5

N2 - The authors propose a novel edge-illuminated refracting-facet photodiode (RFPD), where the incident light parallel to the up-side surface is refracted at an angled facet and absorbed in a thin absorption layer. Fabricated RFPDs with an absorption layer thickness of 1.5μm show a responsivity as high as 0.96A/W even at a bias voltage of 0.5V for a flat-ended singlemode fibre.

AB - The authors propose a novel edge-illuminated refracting-facet photodiode (RFPD), where the incident light parallel to the up-side surface is refracted at an angled facet and absorbed in a thin absorption layer. Fabricated RFPDs with an absorption layer thickness of 1.5μm show a responsivity as high as 0.96A/W even at a bias voltage of 0.5V for a flat-ended singlemode fibre.

KW - Photodiodes

KW - Planar lightwave circuits

UR - http://www.scopus.com/inward/record.url?scp=0030571375&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030571375&partnerID=8YFLogxK

U2 - 10.1049/el:19961590

DO - 10.1049/el:19961590

M3 - Article

AN - SCOPUS:0030571375

VL - 32

SP - 2346

EP - 2348

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 25

ER -

Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this