Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage

H. Fukano; A. Kozen; K. Kato; O. Nakajima

doi:10.1049/el:19961590

Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage

H. Fukano, A. Kozen, K. Kato, O. Nakajima

Research output: Contribution to journal › Article

15 Citations (Scopus)

Abstract

The authors propose a novel edge-illuminated refracting-facet photodiode (RFPD), where the incident light parallel to the up-side surface is refracted at an angled facet and absorbed in a thin absorption layer. Fabricated RFPDs with an absorption layer thickness of 1.5μm show a responsivity as high as 0.96A/W even at a bias voltage of 0.5V for a flat-ended singlemode fibre.

Original language	English
Pages (from-to)	2346-2348
Number of pages	3
Journal	Electronics Letters
Volume	32
Issue number	25
DOIs	https://doi.org/10.1049/el:19961590
Publication status	Published - Dec 5 1996
Externally published	Yes

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Keywords

Photodiodes
Planar lightwave circuits

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Fukano, H., Kozen, A., Kato, K., & Nakajima, O. (1996). Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage. Electronics Letters, 32(25), 2346-2348. https://doi.org/10.1049/el:19961590

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Access to Document

10.1049/el:19961590