Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage

Hideki Fukano, A. Kozen, K. Kato, O. Nakajima

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The authors propose a novel edge-illuminated refracting-facet photodiode (RFPD), where the incident light parallel to the up-side surface is refracted at an angled facet and absorbed in a thin absorption layer. Fabricated RFPDs with an absorption layer thickness of 1.5μm show a responsivity as high as 0.96A/W even at a bias voltage of 0.5V for a flat-ended singlemode fibre.

Original languageEnglish
Pages (from-to)2346-2348
Number of pages3
JournalElectronics Letters
Volume32
Issue number25
Publication statusPublished - Dec 5 1996
Externally publishedYes

Fingerprint

Bias voltage
Photodiodes
Fibers
Electric potential

Keywords

  • Photodiodes
  • Planar lightwave circuits

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage. / Fukano, Hideki; Kozen, A.; Kato, K.; Nakajima, O.

In: Electronics Letters, Vol. 32, No. 25, 05.12.1996, p. 2346-2348.

Research output: Contribution to journalArticle

Fukano, Hideki ; Kozen, A. ; Kato, K. ; Nakajima, O. / Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage. In: Electronics Letters. 1996 ; Vol. 32, No. 25. pp. 2346-2348.
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