Edge-enhancement writing for E-beam nanolithography

K. Yamazaki, T. Yamaguchi, H. Namatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electron beam (EB) nanolithography is essential for nanotechnology using nanopatterns, such as nanodevice fabrication. For establishing that, high accuracy of pattern size is necessary as well as high resolution. However, pattern-edge roughness, i.e. line-edge roughness (LER), causes fluctuation of pattern size and degrades dimension controllability. Many approaches to reducing LER have been reported, which are chiefly based on the improvement of resist materials. However, in addition to material approaches, an EB-writing-based approach is necessary in order to suppress LER further. In this report, we propose edge-enhancement writing as a new EB writing method for reducing LER. Simulation and experimental data clarify the effectiveness of this technique.

Original languageEnglish
Title of host publication2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages32-33
Number of pages2
ISBN (Print)4891140313, 9784891140311
DOIs
Publication statusPublished - 2002
Externally publishedYes
EventInternational Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan
Duration: Nov 6 2002Nov 8 2002

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2002
CountryJapan
CityTokyo
Period11/6/0211/8/02

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Yamazaki, K., Yamaguchi, T., & Namatsu, H. (2002). Edge-enhancement writing for E-beam nanolithography. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002 (pp. 32-33). [1178529] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2002.1178529