Edge-enhancement writing for E-beam nanolithography

K. Yamazaki; T. Yamaguchi; H. Namatsu

doi:10.1109/IMNC.2002.1178529

Edge-enhancement writing for E-beam nanolithography

K. Yamazaki, T. Yamaguchi, H. Namatsu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electron beam (EB) nanolithography is essential for nanotechnology using nanopatterns, such as nanodevice fabrication. For establishing that, high accuracy of pattern size is necessary as well as high resolution. However, pattern-edge roughness, i.e. line-edge roughness (LER), causes fluctuation of pattern size and degrades dimension controllability. Many approaches to reducing LER have been reported, which are chiefly based on the improvement of resist materials. However, in addition to material approaches, an EB-writing-based approach is necessary in order to suppress LER further. In this report, we propose edge-enhancement writing as a new EB writing method for reducing LER. Simulation and experimental data clarify the effectiveness of this technique.

Original language	English
Title of host publication	2002 International Microprocesses and Nanotechnology Conference, MNC 2002
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	32-33
Number of pages	2
ISBN (Print)	4891140313, 9784891140311
DOIs	https://doi.org/10.1109/IMNC.2002.1178529
Publication status	Published - 2002
Externally published	Yes
Event	International Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan Duration: Nov 6 2002 → Nov 8 2002

Other

Other	International Microprocesses and Nanotechnology Conference, MNC 2002
Country/Territory	Japan
City	Tokyo
Period	11/6/02 → 11/8/02

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IMNC.2002.1178529

Cite this

Yamazaki, K, Yamaguchi, T & Namatsu, H 2002, Edge-enhancement writing for E-beam nanolithography. in 2002 International Microprocesses and Nanotechnology Conference, MNC 2002., 1178529, Institute of Electrical and Electronics Engineers Inc., pp. 32-33, International Microprocesses and Nanotechnology Conference, MNC 2002, Tokyo, Japan, 11/6/02. https://doi.org/10.1109/IMNC.2002.1178529

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title = "Edge-enhancement writing for E-beam nanolithography",

abstract = "Electron beam (EB) nanolithography is essential for nanotechnology using nanopatterns, such as nanodevice fabrication. For establishing that, high accuracy of pattern size is necessary as well as high resolution. However, pattern-edge roughness, i.e. line-edge roughness (LER), causes fluctuation of pattern size and degrades dimension controllability. Many approaches to reducing LER have been reported, which are chiefly based on the improvement of resist materials. However, in addition to material approaches, an EB-writing-based approach is necessary in order to suppress LER further. In this report, we propose edge-enhancement writing as a new EB writing method for reducing LER. Simulation and experimental data clarify the effectiveness of this technique.",

author = "K. Yamazaki and T. Yamaguchi and H. Namatsu",

year = "2002",

doi = "10.1109/IMNC.2002.1178529",

language = "English",

isbn = "4891140313",

pages = "32--33",

booktitle = "2002 International Microprocesses and Nanotechnology Conference, MNC 2002",

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note = "International Microprocesses and Nanotechnology Conference, MNC 2002 ; Conference date: 06-11-2002 Through 08-11-2002",

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AU - Yamazaki, K.

AU - Yamaguchi, T.

AU - Namatsu, H.

PY - 2002

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N2 - Electron beam (EB) nanolithography is essential for nanotechnology using nanopatterns, such as nanodevice fabrication. For establishing that, high accuracy of pattern size is necessary as well as high resolution. However, pattern-edge roughness, i.e. line-edge roughness (LER), causes fluctuation of pattern size and degrades dimension controllability. Many approaches to reducing LER have been reported, which are chiefly based on the improvement of resist materials. However, in addition to material approaches, an EB-writing-based approach is necessary in order to suppress LER further. In this report, we propose edge-enhancement writing as a new EB writing method for reducing LER. Simulation and experimental data clarify the effectiveness of this technique.

AB - Electron beam (EB) nanolithography is essential for nanotechnology using nanopatterns, such as nanodevice fabrication. For establishing that, high accuracy of pattern size is necessary as well as high resolution. However, pattern-edge roughness, i.e. line-edge roughness (LER), causes fluctuation of pattern size and degrades dimension controllability. Many approaches to reducing LER have been reported, which are chiefly based on the improvement of resist materials. However, in addition to material approaches, an EB-writing-based approach is necessary in order to suppress LER further. In this report, we propose edge-enhancement writing as a new EB writing method for reducing LER. Simulation and experimental data clarify the effectiveness of this technique.

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BT - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002

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Y2 - 6 November 2002 through 8 November 2002

ER -

Edge-enhancement writing for E-beam nanolithography

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