TY - JOUR
T1 - Early stages of sintering of silicon nitride nanoclusters
T2 - A molecular-dynamics study on parallel machines
AU - Tsuruta, K.
AU - Omeltchenko, A.
AU - Kalia, R. K.
AU - Vashishta, P.
PY - 1996/2/20
Y1 - 1996/2/20
N2 - Sintering of Si3N4 nanoclusters is investigated with the molecular-dynamics approach. At 2000 K thermally rough nanocrystals develop an asymmetric neck in 100 picoseconds. The neck contains more fourfold than threefold coordinated Si atoms. Amorphous nanoclusters develop a symmetric neck which has nearly equal number of threefold and fourfold coordinated Si atoms. In both cases, sintering is driven by surface diffusion of Si and N atoms. The diffusion is much more rapid in the neck joining amorphous nanoclusters than in the neck region of nanocrystals.
AB - Sintering of Si3N4 nanoclusters is investigated with the molecular-dynamics approach. At 2000 K thermally rough nanocrystals develop an asymmetric neck in 100 picoseconds. The neck contains more fourfold than threefold coordinated Si atoms. Amorphous nanoclusters develop a symmetric neck which has nearly equal number of threefold and fourfold coordinated Si atoms. In both cases, sintering is driven by surface diffusion of Si and N atoms. The diffusion is much more rapid in the neck joining amorphous nanoclusters than in the neck region of nanocrystals.
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U2 - 10.1209/epl/i1996-00359-2
DO - 10.1209/epl/i1996-00359-2
M3 - Article
AN - SCOPUS:0030556160
VL - 33
SP - 441
EP - 446
JO - Lettere Al Nuovo Cimento
JF - Lettere Al Nuovo Cimento
SN - 0295-5075
IS - 6
ER -