Early stages of sintering of silicon nitride nanoclusters: A molecular-dynamics study on parallel machines

K. Tsuruta; A. Omeltchenko; R. K. Kalia; P. Vashishta

doi:10.1209/epl/i1996-00359-2

Early stages of sintering of silicon nitride nanoclusters: A molecular-dynamics study on parallel machines

K. Tsuruta, A. Omeltchenko, R. K. Kalia, P. Vashishta

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Sintering of Si₃N₄ nanoclusters is investigated with the molecular-dynamics approach. At 2000 K thermally rough nanocrystals develop an asymmetric neck in 100 picoseconds. The neck contains more fourfold than threefold coordinated Si atoms. Amorphous nanoclusters develop a symmetric neck which has nearly equal number of threefold and fourfold coordinated Si atoms. In both cases, sintering is driven by surface diffusion of Si and N atoms. The diffusion is much more rapid in the neck joining amorphous nanoclusters than in the neck region of nanocrystals.

Original language	English
Pages (from-to)	441-446
Number of pages	6
Journal	Europhysics Letters
Volume	33
Issue number	6
DOIs	https://doi.org/10.1209/epl/i1996-00359-2
Publication status	Published - Feb 20 1996
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{ff75d98f0c684eb490aaa8e009c50715,

title = "Early stages of sintering of silicon nitride nanoclusters: A molecular-dynamics study on parallel machines",

abstract = "Sintering of Si3N4 nanoclusters is investigated with the molecular-dynamics approach. At 2000 K thermally rough nanocrystals develop an asymmetric neck in 100 picoseconds. The neck contains more fourfold than threefold coordinated Si atoms. Amorphous nanoclusters develop a symmetric neck which has nearly equal number of threefold and fourfold coordinated Si atoms. In both cases, sintering is driven by surface diffusion of Si and N atoms. The diffusion is much more rapid in the neck joining amorphous nanoclusters than in the neck region of nanocrystals.",

author = "K. Tsuruta and A. Omeltchenko and Kalia, {R. K.} and P. Vashishta",

year = "1996",

month = feb,

day = "20",

doi = "10.1209/epl/i1996-00359-2",

language = "English",

volume = "33",

pages = "441--446",

journal = "Europhysics Letters",

issn = "0295-5075",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - Early stages of sintering of silicon nitride nanoclusters

T2 - A molecular-dynamics study on parallel machines

AU - Tsuruta, K.

AU - Omeltchenko, A.

AU - Kalia, R. K.

AU - Vashishta, P.

PY - 1996/2/20

Y1 - 1996/2/20

N2 - Sintering of Si3N4 nanoclusters is investigated with the molecular-dynamics approach. At 2000 K thermally rough nanocrystals develop an asymmetric neck in 100 picoseconds. The neck contains more fourfold than threefold coordinated Si atoms. Amorphous nanoclusters develop a symmetric neck which has nearly equal number of threefold and fourfold coordinated Si atoms. In both cases, sintering is driven by surface diffusion of Si and N atoms. The diffusion is much more rapid in the neck joining amorphous nanoclusters than in the neck region of nanocrystals.

AB - Sintering of Si3N4 nanoclusters is investigated with the molecular-dynamics approach. At 2000 K thermally rough nanocrystals develop an asymmetric neck in 100 picoseconds. The neck contains more fourfold than threefold coordinated Si atoms. Amorphous nanoclusters develop a symmetric neck which has nearly equal number of threefold and fourfold coordinated Si atoms. In both cases, sintering is driven by surface diffusion of Si and N atoms. The diffusion is much more rapid in the neck joining amorphous nanoclusters than in the neck region of nanocrystals.

UR - http://www.scopus.com/inward/record.url?scp=0030556160&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030556160&partnerID=8YFLogxK

U2 - 10.1209/epl/i1996-00359-2

DO - 10.1209/epl/i1996-00359-2

M3 - Article

AN - SCOPUS:0030556160

VL - 33

SP - 441

EP - 446

JO - Europhysics Letters

JF - Europhysics Letters

SN - 0295-5075

IS - 6

ER -

Early stages of sintering of silicon nitride nanoclusters: A molecular-dynamics study on parallel machines

Abstract

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