Early stages of sintering of silicon nitride nanoclusters: A molecular-dynamics study on parallel machines

K. Tsuruta, A. Omeltchenko, R. K. Kalia, P. Vashishta

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)

Abstract

Sintering of Si3N4 nanoclusters is investigated with the molecular-dynamics approach. At 2000 K thermally rough nanocrystals develop an asymmetric neck in 100 picoseconds. The neck contains more fourfold than threefold coordinated Si atoms. Amorphous nanoclusters develop a symmetric neck which has nearly equal number of threefold and fourfold coordinated Si atoms. In both cases, sintering is driven by surface diffusion of Si and N atoms. The diffusion is much more rapid in the neck joining amorphous nanoclusters than in the neck region of nanocrystals.

Original languageEnglish
Pages (from-to)441-446
Number of pages6
JournalEurophysics Letters
Volume33
Issue number6
DOIs
Publication statusPublished - Feb 20 1996
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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