Dual-Gate field-effect transistor hydrogen gas sensor with thermal compensation

Keiji Tsukada, Masatoshi Kariya, Tomiharu Yamaguchi, Toshihiko Kiwa, Hironobu Yamada, Tsuneyoshi Maehara, Tadayoshi Yamamoto, Shinsuke Kunitsugu

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15 Citations (Scopus)

Abstract

We developed a dual-gate field-effect transistor (FET) hydrogen gas sensor for application to hydrogen vehicles. The dual-gate FET hydrogen sensor was integrated with a Pt-gate FET to detect hydrogen and a Ti-gate FET as the reference sensor in the same Si chip. The Ti-FET had the same structure as the Pt-FET except for the gate metal. The Pt-FET showed a good response to hydrogen gas above 10ppm in air, while the Ti-FET did not show any response to hydrogen gas. The differential output voltage between the Pt-FET and the Ti-FET was stable in the temperature range from room temperature to 80 °C because of the same temperature dependence of the current-voltage (I-V) characteristics. In addition, the temperature of the integrated hydrogen sensor was controlled by an integrated system consisting of a heater and a thermometer at any given temperature under severe weather conditions.

Original languageEnglish
Article number024206
JournalJapanese Journal of Applied Physics
Volume49
Issue number2 Part 1
DOIs
Publication statusPublished - Feb 1 2010

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Tsukada, K., Kariya, M., Yamaguchi, T., Kiwa, T., Yamada, H., Maehara, T., Yamamoto, T., & Kunitsugu, S. (2010). Dual-Gate field-effect transistor hydrogen gas sensor with thermal compensation. Japanese Journal of Applied Physics, 49(2 Part 1), [024206]. https://doi.org/10.1143/JJAP.49.024206