Dual gate FET hydrogen gas sensor

K. Tsukada; M. Kariya; T. Yamaguchi; T. Kiwa; H. Yamada; T. Maehara; T. Yamamoto; S. Kunitsugu

doi:10.1109/ICSENS.2009.5398290

Dual gate FET hydrogen gas sensor

K. Tsukada, M. Kariya, T. Yamaguchi, T. Kiwa, H. Yamada, T. Maehara, T. Yamamoto, S. Kunitsugu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We developed a dual gate FET hydrogen gas sensor for application to hydrogen vehicles. The dual gate FET hydrogen sensor was integrated with Pt-gate FET to detect hydrogen and Ti-gate FET as the reference sensor in the same Si chip. Ti-gate FET has the same structure as Pt-FET except for the gate metal. The Pt-FET showed good response to hydrogen gas above 10 ppm in air, while the Ti-FET did not show any response to hydrogen gas. The differential output voltage between the Pt-FET and the Ti-FET was stable in the range of room temperature to 80° C because of the same temperature dependence of the I-V characteristic.

Original language	English
Title of host publication	IEEE Sensors 2009 Conference - SENSORS 2009
Pages	517-519
Number of pages	3
DOIs	https://doi.org/10.1109/ICSENS.2009.5398290
Publication status	Published - Dec 1 2009
Event	IEEE Sensors 2009 Conference - SENSORS 2009 - Christchurch, New Zealand Duration: Oct 25 2009 → Oct 28 2009

Publication series

Name	Proceedings of IEEE Sensors

Other

Other	IEEE Sensors 2009 Conference - SENSORS 2009
Country	New Zealand
City	Christchurch
Period	10/25/09 → 10/28/09

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ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Tsukada, K., Kariya, M., Yamaguchi, T., Kiwa, T., Yamada, H., Maehara, T., Yamamoto, T., & Kunitsugu, S. (2009). Dual gate FET hydrogen gas sensor. In IEEE Sensors 2009 Conference - SENSORS 2009 (pp. 517-519). [5398290] (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2009.5398290

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abstract = "We developed a dual gate FET hydrogen gas sensor for application to hydrogen vehicles. The dual gate FET hydrogen sensor was integrated with Pt-gate FET to detect hydrogen and Ti-gate FET as the reference sensor in the same Si chip. Ti-gate FET has the same structure as Pt-FET except for the gate metal. The Pt-FET showed good response to hydrogen gas above 10 ppm in air, while the Ti-FET did not show any response to hydrogen gas. The differential output voltage between the Pt-FET and the Ti-FET was stable in the range of room temperature to 80° C because of the same temperature dependence of the I-V characteristic.",

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AU - Kariya, M.

AU - Yamaguchi, T.

AU - Kiwa, T.

AU - Yamada, H.

AU - Maehara, T.

AU - Yamamoto, T.

AU - Kunitsugu, S.

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AB - We developed a dual gate FET hydrogen gas sensor for application to hydrogen vehicles. The dual gate FET hydrogen sensor was integrated with Pt-gate FET to detect hydrogen and Ti-gate FET as the reference sensor in the same Si chip. Ti-gate FET has the same structure as Pt-FET except for the gate metal. The Pt-FET showed good response to hydrogen gas above 10 ppm in air, while the Ti-FET did not show any response to hydrogen gas. The differential output voltage between the Pt-FET and the Ti-FET was stable in the range of room temperature to 80° C because of the same temperature dependence of the I-V characteristic.

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Access to Document

10.1109/ICSENS.2009.5398290