TY - GEN
T1 - Dual gate FET hydrogen gas sensor
AU - Tsukada, K.
AU - Kariya, M.
AU - Yamaguchi, T.
AU - Kiwa, T.
AU - Yamada, H.
AU - Maehara, T.
AU - Yamamoto, T.
AU - Kunitsugu, S.
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2009
Y1 - 2009
N2 - We developed a dual gate FET hydrogen gas sensor for application to hydrogen vehicles. The dual gate FET hydrogen sensor was integrated with Pt-gate FET to detect hydrogen and Ti-gate FET as the reference sensor in the same Si chip. Ti-gate FET has the same structure as Pt-FET except for the gate metal. The Pt-FET showed good response to hydrogen gas above 10 ppm in air, while the Ti-FET did not show any response to hydrogen gas. The differential output voltage between the Pt-FET and the Ti-FET was stable in the range of room temperature to 80° C because of the same temperature dependence of the I-V characteristic.
AB - We developed a dual gate FET hydrogen gas sensor for application to hydrogen vehicles. The dual gate FET hydrogen sensor was integrated with Pt-gate FET to detect hydrogen and Ti-gate FET as the reference sensor in the same Si chip. Ti-gate FET has the same structure as Pt-FET except for the gate metal. The Pt-FET showed good response to hydrogen gas above 10 ppm in air, while the Ti-FET did not show any response to hydrogen gas. The differential output voltage between the Pt-FET and the Ti-FET was stable in the range of room temperature to 80° C because of the same temperature dependence of the I-V characteristic.
UR - http://www.scopus.com/inward/record.url?scp=77951102599&partnerID=8YFLogxK
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U2 - 10.1109/ICSENS.2009.5398290
DO - 10.1109/ICSENS.2009.5398290
M3 - Conference contribution
AN - SCOPUS:77951102599
SN - 9781424445486
T3 - Proceedings of IEEE Sensors
SP - 517
EP - 519
BT - IEEE Sensors 2009 Conference - SENSORS 2009
T2 - IEEE Sensors 2009 Conference - SENSORS 2009
Y2 - 25 October 2009 through 28 October 2009
ER -