Abstract
We developed a dual gate FET hydrogen gas sensor for application to hydrogen vehicles. The dual gate FET hydrogen sensor was integrated with Pt-gate FET to detect hydrogen and Ti-gate FET as the reference sensor in the same Si chip. Ti-gate FET has the same structure as Pt-FET except for the gate metal. The Pt-FET showed good response to hydrogen gas above 10 ppm in air, while the Ti-FET did not show any response to hydrogen gas. The differential output voltage between the Pt-FET and the Ti-FET was stable in the range of room temperature to 80° C because of the same temperature dependence of the I-V characteristic.
| Original language | English |
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| Title of host publication | IEEE Sensors 2009 Conference - SENSORS 2009 |
| Pages | 517-519 |
| Number of pages | 3 |
| DOIs | |
| Publication status | Published - Dec 1 2009 |
| Event | IEEE Sensors 2009 Conference - SENSORS 2009 - Christchurch, New Zealand Duration: Oct 25 2009 → Oct 28 2009 |
Publication series
| Name | Proceedings of IEEE Sensors |
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Other
| Other | IEEE Sensors 2009 Conference - SENSORS 2009 |
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| Country | New Zealand |
| City | Christchurch |
| Period | 10/25/09 → 10/28/09 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Tsukada, K., Kariya, M., Yamaguchi, T., Kiwa, T., Yamada, H., Maehara, T., Yamamoto, T., & Kunitsugu, S. (2009). Dual gate FET hydrogen gas sensor. In IEEE Sensors 2009 Conference - SENSORS 2009 (pp. 517-519). [5398290] (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2009.5398290