Double-island single-electron devices - a useful unit device for single-electron logic LSI's

Akira Fujiwara, Yasuo Takahashi, Kenji Yamazaki, Hideo Namatsu, Masao Nagase, Kenji Kurihara, Katsumi Murase

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

We fabricated a single-electron device that is useful as a unit device for single-electron logic circuits. The device is a three-current-terminal device fabricated on a silicon-on-insulator (SOI) wafer, which includes two Si islands whose electric potential can be controlled by gates. Sub-50-nm Si islands were integrated in an area smaller than 0.02 μm2 through self-aligned formation of the islands by pattern-dependent oxidation (PADOX) of a T-shaped wire. By PADOX, each island was embedded in one branch of the T-shaped wire. We show two electrical characteristics which demonstrate the usefulness of this device as a circuit element. First, current switching between two branches was performed at 30 K by using gate voltage to control the Coulomb blockade in each island. Second, a correlation between the two currents was observed because the two islands were lategrated close to each other. The latter indicates a capacitive coupling between the islands, which opens up the possibility of one-by-one transfer of electrons in this device. These findings show that the proposed island-integration technique is applicable to making ultra-low-power and highly integrated single-electron circuits.

Original languageEnglish
Pages (from-to)954-959
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume46
Issue number5
DOIs
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

Electron devices
large scale integration
logic
Electrons
Wire
Coulomb blockade
Oxidation
electrons
Networks (circuits)
Logic circuits
Electric potential
Silicon
wire
logic circuits
oxidation
electric potential
insulators
wafers
silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Fujiwara, A., Takahashi, Y., Yamazaki, K., Namatsu, H., Nagase, M., Kurihara, K., & Murase, K. (1999). Double-island single-electron devices - a useful unit device for single-electron logic LSI's. IEEE Transactions on Electron Devices, 46(5), 954-959. https://doi.org/10.1109/16.760403

Double-island single-electron devices - a useful unit device for single-electron logic LSI's. / Fujiwara, Akira; Takahashi, Yasuo; Yamazaki, Kenji; Namatsu, Hideo; Nagase, Masao; Kurihara, Kenji; Murase, Katsumi.

In: IEEE Transactions on Electron Devices, Vol. 46, No. 5, 1999, p. 954-959.

Research output: Contribution to journalArticle

Fujiwara, A, Takahashi, Y, Yamazaki, K, Namatsu, H, Nagase, M, Kurihara, K & Murase, K 1999, 'Double-island single-electron devices - a useful unit device for single-electron logic LSI's', IEEE Transactions on Electron Devices, vol. 46, no. 5, pp. 954-959. https://doi.org/10.1109/16.760403
Fujiwara, Akira ; Takahashi, Yasuo ; Yamazaki, Kenji ; Namatsu, Hideo ; Nagase, Masao ; Kurihara, Kenji ; Murase, Katsumi. / Double-island single-electron devices - a useful unit device for single-electron logic LSI's. In: IEEE Transactions on Electron Devices. 1999 ; Vol. 46, No. 5. pp. 954-959.
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