Doped Mott insulator on a Penrose tiling

Shiro Sakai, Nayuta Takemori

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1 Citation (Scopus)


We study the effect of carrier doping to the Mott insulator on the Penrose tiling, aiming at clarifying the interplay between quasiperiodicity and strong electron correlations. We numerically solve the Hubbard model on the Penrose-tiling structure within a real-space dynamical mean-field theory, which can deal with a spatial inhomogeneity as well as a singular self-energy necessary to describe the Mott insulator. We find that the strong correlation effect produces a charge distribution unreachable by a static mean-field approximation. In a small doping region, the spectrum shows a site-dependent gap just above the Fermi energy, which is generated by a singularly large self-energy emergent from the Mott physics and regarded as a real-space counterpart of the momentum-dependent pseudogap observed in a square-lattice Hubbard model.

Original languageEnglish
Article number205138
JournalPhysical Review B
Issue number20
Publication statusPublished - May 15 2022
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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