DLTS study of Pd-H complexes in Si

Sunao Abe, Ryuichi Goura, Koichi Shimoe, Yoichi Kamiura, Yoshifumi Yamashita, Takeshi Ishiyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have observed five electron traps with energy levels at 0.16, 0.30, 0.40, 0.53 and 0.67eV below the conduction band in Pd and H doped Si by DLTS technique. Successive annealing at 373K and 473 K for 30 min respectively caused two levels at Ec-0.16 eV and Ec-0.67 eV to disappear and simultaneously a new level to emerge at Ec-0.19 eV. From such annealing behavior and the comparison of the energy levels observed in the present study with those in the literature, we assign them to various Pd and H related defects as follows, Pd-H2: Ec-0.16 eV and Ec-0.67 eV, Pd acceptor:Ec-0.19 eV, Pd-H3: Ec-0.30 eV, Pd-H1: Ec-0.40 eV.

Original languageEnglish
Title of host publicationDefects-Recognition, Imaging and Physics in Semiconductors XIV
PublisherTrans Tech Publications Ltd
Pages213-216
Number of pages4
ISBN (Print)9783037854426
DOIs
Publication statusPublished - 2012
Event14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 - Miyazaki, Japan
Duration: Sep 25 2011Sep 29 2011

Publication series

NameMaterials Science Forum
Volume725
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
Country/TerritoryJapan
CityMiyazaki
Period9/25/119/29/11

Keywords

  • Annealing
  • DLTS
  • Energy level
  • Hydrogen
  • Palladium
  • Si

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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