DLTS study of Pd-H complexes in Si

Sunao Abe; Ryuichi Goura; Koichi Shimoe; Yoichi Kamiura; Yoshifumi Yamashita; Takeshi Ishiyama

doi:10.4028/www.scientific.net/MSF.725.213

DLTS study of Pd-H complexes in Si

Sunao Abe, Ryuichi Goura, Koichi Shimoe, Yoichi Kamiura, Yoshifumi Yamashita, Takeshi Ishiyama

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have observed five electron traps with energy levels at 0.16, 0.30, 0.40, 0.53 and 0.67eV below the conduction band in Pd and H doped Si by DLTS technique. Successive annealing at 373K and 473 K for 30 min respectively caused two levels at E_c-0.16 eV and E_c-0.67 eV to disappear and simultaneously a new level to emerge at E_c-0.19 eV. From such annealing behavior and the comparison of the energy levels observed in the present study with those in the literature, we assign them to various Pd and H related defects as follows, Pd-H₂: E_c-0.16 eV and E_c-0.67 eV, Pd acceptor:E_c-0.19 eV, Pd-H3: E_c-0.30 eV, Pd-H₁: E_c-0.40 eV.

Original language	English
Title of host publication	Defects-Recognition, Imaging and Physics in Semiconductors XIV
Publisher	Trans Tech Publications Ltd
Pages	213-216
Number of pages	4
ISBN (Print)	9783037854426
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.725.213
Publication status	Published - 2012
Event	14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 - Miyazaki, Japan Duration: Sept 25 2011 → Sept 29 2011

Publication series

Name	Materials Science Forum
Volume	725
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
Country/Territory	Japan
City	Miyazaki
Period	9/25/11 → 9/29/11

Keywords

Annealing
DLTS
Energy level
Hydrogen
Palladium
Si

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.4028/www.scientific.net/MSF.725.213

Cite this

Abe, S, Goura, R, Shimoe, K, Kamiura, Y, Yamashita, Y & Ishiyama, T 2012, DLTS study of Pd-H complexes in Si. in Defects-Recognition, Imaging and Physics in Semiconductors XIV. Materials Science Forum, vol. 725, Trans Tech Publications Ltd, pp. 213-216, 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14, Miyazaki, Japan, 9/25/11. https://doi.org/10.4028/www.scientific.net/MSF.725.213

@inproceedings{4c79857b060a4e29baeafa6f9c4290be,

title = "DLTS study of Pd-H complexes in Si",

abstract = "We have observed five electron traps with energy levels at 0.16, 0.30, 0.40, 0.53 and 0.67eV below the conduction band in Pd and H doped Si by DLTS technique. Successive annealing at 373K and 473 K for 30 min respectively caused two levels at Ec-0.16 eV and Ec-0.67 eV to disappear and simultaneously a new level to emerge at Ec-0.19 eV. From such annealing behavior and the comparison of the energy levels observed in the present study with those in the literature, we assign them to various Pd and H related defects as follows, Pd-H2: Ec-0.16 eV and Ec-0.67 eV, Pd acceptor:Ec-0.19 eV, Pd-H3: Ec-0.30 eV, Pd-H1: Ec-0.40 eV.",

keywords = "Annealing, DLTS, Energy level, Hydrogen, Palladium, Si",

author = "Sunao Abe and Ryuichi Goura and Koichi Shimoe and Yoichi Kamiura and Yoshifumi Yamashita and Takeshi Ishiyama",

note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 ; Conference date: 25-09-2011 Through 29-09-2011",

year = "2012",

doi = "10.4028/www.scientific.net/MSF.725.213",

language = "English",

isbn = "9783037854426",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "213--216",

booktitle = "Defects-Recognition, Imaging and Physics in Semiconductors XIV",

}

TY - GEN

T1 - DLTS study of Pd-H complexes in Si

AU - Abe, Sunao

AU - Goura, Ryuichi

AU - Shimoe, Koichi

AU - Kamiura, Yoichi

AU - Yamashita, Yoshifumi

AU - Ishiyama, Takeshi

PY - 2012

Y1 - 2012

N2 - We have observed five electron traps with energy levels at 0.16, 0.30, 0.40, 0.53 and 0.67eV below the conduction band in Pd and H doped Si by DLTS technique. Successive annealing at 373K and 473 K for 30 min respectively caused two levels at Ec-0.16 eV and Ec-0.67 eV to disappear and simultaneously a new level to emerge at Ec-0.19 eV. From such annealing behavior and the comparison of the energy levels observed in the present study with those in the literature, we assign them to various Pd and H related defects as follows, Pd-H2: Ec-0.16 eV and Ec-0.67 eV, Pd acceptor:Ec-0.19 eV, Pd-H3: Ec-0.30 eV, Pd-H1: Ec-0.40 eV.

AB - We have observed five electron traps with energy levels at 0.16, 0.30, 0.40, 0.53 and 0.67eV below the conduction band in Pd and H doped Si by DLTS technique. Successive annealing at 373K and 473 K for 30 min respectively caused two levels at Ec-0.16 eV and Ec-0.67 eV to disappear and simultaneously a new level to emerge at Ec-0.19 eV. From such annealing behavior and the comparison of the energy levels observed in the present study with those in the literature, we assign them to various Pd and H related defects as follows, Pd-H2: Ec-0.16 eV and Ec-0.67 eV, Pd acceptor:Ec-0.19 eV, Pd-H3: Ec-0.30 eV, Pd-H1: Ec-0.40 eV.

KW - Annealing

KW - DLTS

KW - Energy level

KW - Hydrogen

KW - Palladium

KW - Si

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SN - 9783037854426

T3 - Materials Science Forum

SP - 213

EP - 216

BT - Defects-Recognition, Imaging and Physics in Semiconductors XIV

PB - Trans Tech Publications Ltd

T2 - 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14

Y2 - 25 September 2011 through 29 September 2011

ER -

DLTS study of Pd-H complexes in Si

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