| Original language | English |
|---|---|
| Pages (from-to) | 285-291 |
| Number of pages | 7 |
| Journal | The Forum on the Science and Technology of Silicon Materials 2010 Proceedings |
| Publication status | Published - 2010 |
Cite this
Dislocation motion in B-doped SiGe epifilm on Si substrate （共著）. / Yamashita, Yoshifumi.
In: The Forum on the Science and Technology of Silicon Materials 2010 Proceedings, 2010, p. 285-291.Research output: Contribution to journal › Article
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title = "Dislocation motion in B-doped SiGe epifilm on Si substrate （共著）",
author = "Yoshifumi Yamashita",
year = "2010",
language = "English",
pages = "285--291",
journal = "The Forum on the Science and Technology of Silicon Materials 2010 Proceedings",
}
TY - JOUR
T1 - Dislocation motion in B-doped SiGe epifilm on Si substrate （共著）
AU - Yamashita, Yoshifumi
PY - 2010
Y1 - 2010
M3 - Article
SP - 285
EP - 291
JO - The Forum on the Science and Technology of Silicon Materials 2010 Proceedings
JF - The Forum on the Science and Technology of Silicon Materials 2010 Proceedings
ER -