Dislocation motion in B-doped SiGe epifilm on Si substrate (共著)

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)285-291
Number of pages7
JournalThe Forum on the Science and Technology of Silicon Materials 2010 Proceedings
Publication statusPublished - 2010

Cite this

@article{9d64a91e18c849419cd2d8ffaa964589,
title = "Dislocation motion in B-doped SiGe epifilm on Si substrate (共著)",
author = "Yoshifumi Yamashita",
year = "2010",
language = "English",
pages = "285--291",
journal = "The Forum on the Science and Technology of Silicon Materials 2010 Proceedings",

}

TY - JOUR

T1 - Dislocation motion in B-doped SiGe epifilm on Si substrate (共著)

AU - Yamashita, Yoshifumi

PY - 2010

Y1 - 2010

M3 - Article

SP - 285

EP - 291

JO - The Forum on the Science and Technology of Silicon Materials 2010 Proceedings

JF - The Forum on the Science and Technology of Silicon Materials 2010 Proceedings

ER -