| Original language | English |
|---|---|
| Pages (from-to) | 285-291 |
| Number of pages | 7 |
| Journal | The Forum on the Science and Technology of Silicon Materials 2010 Proceedings |
| Publication status | Published - 2010 |
Dislocation motion in B-doped SiGe epifilm on Si substrate （共著）
Research output: Contribution to journal › Article