Abstract
Measurements of dislocation glide velocity in heteroepitaxial Si1-xGex thin films grown on Si(100) substrates revealed that the velocity of threading dislocationspenetrating the epitaxial layers depends almost linearly on the film thickness(dislocation length) in very thin films and shows saturation as the film thicknessexceeds about 1 pm, in agreement with results of a similar experiment performed byTuppen and Gibbings in 1990. The activation energy of dislocation motion isunaltered over this transition, which is incompatible with the view that suchsaturation is brought about by commencement of kink collision in long dislocations. This fact, together with other findings in the present study, supports aninterpretation that the dislocation glide in bulk crystals of Si, even though thesegment of straight dislocation is of a macroscopic dimension, proceeds withoutkink collision and is controlled solely by the formation rate of double kinks.
| Original language | English |
|---|---|
| Pages (from-to) | 165-171 |
| Number of pages | 7 |
| Journal | Philosophical Magazine Letters |
| Volume | 67 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1993 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Dislocation glide motion in heteroepitaxial thin films of Si1-xGex/Si(100). / Yamashita, Yoshifumi; Maeda, K.; Fujita, K.; Usami, N.; Suzuki, K.; Fukatsu, S.; Mera, Y.; Shiraki, Y.
In: Philosophical Magazine Letters, Vol. 67, No. 3, 1993, p. 165-171.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Dislocation glide motion in heteroepitaxial thin films of Si1-xGex/Si(100)
AU - Yamashita, Yoshifumi
AU - Maeda, K.
AU - Fujita, K.
AU - Usami, N.
AU - Suzuki, K.
AU - Fukatsu, S.
AU - Mera, Y.
AU - Shiraki, Y.
PY - 1993
Y1 - 1993
N2 - Measurements of dislocation glide velocity in heteroepitaxial Si1-xGex thin films grown on Si(100) substrates revealed that the velocity of threading dislocationspenetrating the epitaxial layers depends almost linearly on the film thickness(dislocation length) in very thin films and shows saturation as the film thicknessexceeds about 1 pm, in agreement with results of a similar experiment performed byTuppen and Gibbings in 1990. The activation energy of dislocation motion isunaltered over this transition, which is incompatible with the view that suchsaturation is brought about by commencement of kink collision in long dislocations. This fact, together with other findings in the present study, supports aninterpretation that the dislocation glide in bulk crystals of Si, even though thesegment of straight dislocation is of a macroscopic dimension, proceeds withoutkink collision and is controlled solely by the formation rate of double kinks.
AB - Measurements of dislocation glide velocity in heteroepitaxial Si1-xGex thin films grown on Si(100) substrates revealed that the velocity of threading dislocationspenetrating the epitaxial layers depends almost linearly on the film thickness(dislocation length) in very thin films and shows saturation as the film thicknessexceeds about 1 pm, in agreement with results of a similar experiment performed byTuppen and Gibbings in 1990. The activation energy of dislocation motion isunaltered over this transition, which is incompatible with the view that suchsaturation is brought about by commencement of kink collision in long dislocations. This fact, together with other findings in the present study, supports aninterpretation that the dislocation glide in bulk crystals of Si, even though thesegment of straight dislocation is of a macroscopic dimension, proceeds withoutkink collision and is controlled solely by the formation rate of double kinks.
UR - http://www.scopus.com/inward/record.url?scp=0001431097&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0001431097&partnerID=8YFLogxK
U2 - 10.1080/09500839308240925
DO - 10.1080/09500839308240925
M3 - Article
AN - SCOPUS:0001431097
VL - 67
SP - 165
EP - 171
JO - Philosophical Magazine Letters
JF - Philosophical Magazine Letters
SN - 0950-0839
IS - 3
ER -