TY - JOUR
T1 - Direct observation of double valence-band extrema and anisotropic effective masses of the thermoelectric material SnSe
AU - Nagayama, Takanobu
AU - Terashima, Kensei
AU - Wakita, Takanori
AU - Fujiwara, Hirokazu
AU - Fukura, Tetsushi
AU - Yano, Yuko
AU - Ono, Kanta
AU - Kumigashira, Hiroshi
AU - Ogiso, Osamu
AU - Yamashita, Aichi
AU - Takano, Yoshihiko
AU - Mori, Hitoshi
AU - Usui, Hidetomo
AU - Ochi, Masayuki
AU - Kuroki, Kazuhiko
AU - Muraoka, Yuji
AU - Yokoya, Takayoshi
N1 - Publisher Copyright:
Copyright © 2017, The Authors. All rights reserved.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2017/12/26
Y1 - 2017/12/26
N2 - Synchrotron-based angle-resolved photoemission spectroscopy is used to determine the electronic structure of layered SnSe, which was recently turned out to be a potential thermoelectric material. We observe that the top of the valence band consists of two nearly independent hole bands, whose tops differ by ~20 meV in energy, indicating the necessity of a multivalley model to describe the thermoelectric properties. The estimated effective masses are anisotropic, with in-plane values of 0.16–0.39 m0 and an out-of-plane value of 0.71 m0, where m0 is the rest electron mass. Information of the electronic structure is essential to further enhance the thermoelectric performance of hole-doped SnSe.
AB - Synchrotron-based angle-resolved photoemission spectroscopy is used to determine the electronic structure of layered SnSe, which was recently turned out to be a potential thermoelectric material. We observe that the top of the valence band consists of two nearly independent hole bands, whose tops differ by ~20 meV in energy, indicating the necessity of a multivalley model to describe the thermoelectric properties. The estimated effective masses are anisotropic, with in-plane values of 0.16–0.39 m0 and an out-of-plane value of 0.71 m0, where m0 is the rest electron mass. Information of the electronic structure is essential to further enhance the thermoelectric performance of hole-doped SnSe.
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M3 - Article
AN - SCOPUS:85095092541
JO - [No source information available]
JF - [No source information available]
SN - 0402-1215
ER -