Abstract
In situ high-resolution transmission electron microscopy in the profile geometry has been used to observe the evolving features of the Au/InSb(111) B-(1 × 2) interface. During Au deposition in the range between 0 monolayer (ML) and ∼1 ML coverage, the outermost Sb-trimer layer of the InSb(111) B-(2 × 2) substrate changes in contrast, presumably revealing that deposited Au atoms are partially captured into it. At ∼2 ML coverage, an unknown phase emerges on the outermost layer, beyond which it continues to grow epitaxially in an island state, causing partial disruption of the substrate. The phase is identified as Au9In4 alloy with a γ-brass structure determined from a digital Fourier transform diffractogram and a transmission electron diffraction pattern. The epitaxial relationship of Au9In4 with the substrate is given by (111)InSb∥(111) Au9In4 and [110] InSb∥[110] Au9In4. The high resolution-profile transmission electron microscopy images of this alloy agree well with the results calculated by the multislice method.
| Original language | English |
|---|---|
| Pages (from-to) | 2324-2327 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 16 |
| Issue number | 4 |
| Publication status | Published - Jul 1998 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
- Surfaces and Interfaces
Cite this
Direct imaging of the evolving Au/InSb(111) B interface. / Mishima, Tetsuya; Nakamura, Jun; Tsukada, Keiji; Nishizawa, Masayasu; Eguchi, Toyoaki; Osaka, Toshiaki.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 4, 07.1998, p. 2324-2327.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Direct imaging of the evolving Au/InSb(111) B interface
AU - Mishima, Tetsuya
AU - Nakamura, Jun
AU - Tsukada, Keiji
AU - Nishizawa, Masayasu
AU - Eguchi, Toyoaki
AU - Osaka, Toshiaki
PY - 1998/7
Y1 - 1998/7
N2 - In situ high-resolution transmission electron microscopy in the profile geometry has been used to observe the evolving features of the Au/InSb(111) B-(1 × 2) interface. During Au deposition in the range between 0 monolayer (ML) and ∼1 ML coverage, the outermost Sb-trimer layer of the InSb(111) B-(2 × 2) substrate changes in contrast, presumably revealing that deposited Au atoms are partially captured into it. At ∼2 ML coverage, an unknown phase emerges on the outermost layer, beyond which it continues to grow epitaxially in an island state, causing partial disruption of the substrate. The phase is identified as Au9In4 alloy with a γ-brass structure determined from a digital Fourier transform diffractogram and a transmission electron diffraction pattern. The epitaxial relationship of Au9In4 with the substrate is given by (111)InSb∥(111) Au9In4 and [110] InSb∥[110] Au9In4. The high resolution-profile transmission electron microscopy images of this alloy agree well with the results calculated by the multislice method.
AB - In situ high-resolution transmission electron microscopy in the profile geometry has been used to observe the evolving features of the Au/InSb(111) B-(1 × 2) interface. During Au deposition in the range between 0 monolayer (ML) and ∼1 ML coverage, the outermost Sb-trimer layer of the InSb(111) B-(2 × 2) substrate changes in contrast, presumably revealing that deposited Au atoms are partially captured into it. At ∼2 ML coverage, an unknown phase emerges on the outermost layer, beyond which it continues to grow epitaxially in an island state, causing partial disruption of the substrate. The phase is identified as Au9In4 alloy with a γ-brass structure determined from a digital Fourier transform diffractogram and a transmission electron diffraction pattern. The epitaxial relationship of Au9In4 with the substrate is given by (111)InSb∥(111) Au9In4 and [110] InSb∥[110] Au9In4. The high resolution-profile transmission electron microscopy images of this alloy agree well with the results calculated by the multislice method.
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UR - http://www.scopus.com/inward/citedby.url?scp=0012953431&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0012953431
VL - 16
SP - 2324
EP - 2327
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 4
ER -