Direct imaging of the evolving Au/InSb(111) B interface

Tetsuya Mishima, Jun Nakamura, Keiji Tsukada, Masayasu Nishizawa, Toyoaki Eguchi, Toshiaki Osaka

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In situ high-resolution transmission electron microscopy in the profile geometry has been used to observe the evolving features of the Au/InSb(111) B-(1 × 2) interface. During Au deposition in the range between 0 monolayer (ML) and ∼1 ML coverage, the outermost Sb-trimer layer of the InSb(111) B-(2 × 2) substrate changes in contrast, presumably revealing that deposited Au atoms are partially captured into it. At ∼2 ML coverage, an unknown phase emerges on the outermost layer, beyond which it continues to grow epitaxially in an island state, causing partial disruption of the substrate. The phase is identified as Au9In4 alloy with a γ-brass structure determined from a digital Fourier transform diffractogram and a transmission electron diffraction pattern. The epitaxial relationship of Au9In4 with the substrate is given by (111)InSb∥(111) Au9In4 and [110] InSb∥[110] Au9In4. The high resolution-profile transmission electron microscopy images of this alloy agree well with the results calculated by the multislice method.

Original languageEnglish
Pages (from-to)2324-2327
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number4
Publication statusPublished - Jul 1998
Externally publishedYes

Fingerprint

Monolayers
High resolution transmission electron microscopy
Imaging techniques
Substrates
transmission electron microscopy
high resolution
brasses
Brass
profiles
trimers
Electron diffraction
Diffraction patterns
Fourier transforms
diffraction patterns
electron diffraction
Atoms
Geometry
geometry
atoms

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Direct imaging of the evolving Au/InSb(111) B interface. / Mishima, Tetsuya; Nakamura, Jun; Tsukada, Keiji; Nishizawa, Masayasu; Eguchi, Toyoaki; Osaka, Toshiaki.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 4, 07.1998, p. 2324-2327.

Research output: Contribution to journalArticle

Mishima, T, Nakamura, J, Tsukada, K, Nishizawa, M, Eguchi, T & Osaka, T 1998, 'Direct imaging of the evolving Au/InSb(111) B interface', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 16, no. 4, pp. 2324-2327.
Mishima, Tetsuya ; Nakamura, Jun ; Tsukada, Keiji ; Nishizawa, Masayasu ; Eguchi, Toyoaki ; Osaka, Toshiaki. / Direct imaging of the evolving Au/InSb(111) B interface. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1998 ; Vol. 16, No. 4. pp. 2324-2327.
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