Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project

Y. Takeuchi; S. H. Kim; T. Iida; C. Asano; R. Wakasa; G. Maekawa; S. Nakahara; R. Yamane; H. Ikeda; T. Wada; K. Nagase; S. Matsuura; Y. Arai; I. Kurachi; M. Hazumi; T. Yoshida; S. Mima; K. Kiuchi; H. Ishino; A. Kibayashi; Y. Kato; G. Fujii; S. Shiki; M. Ukibe; M. Ohkubo; S. Kawahito; E. Ramberg; P. Rubinov; D. Sergatskov; S. B. Kim; Y. H. Kim; H. J. Lee

doi:10.1109/VLSI-TSA51926.2021.9440090

Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project

Y. Takeuchi, S. H. Kim, T. Iida, C. Asano, R. Wakasa, G. Maekawa, S. Nakahara, R. Yamane, H. Ikeda, T. Wada, K. Nagase, S. Matsuura, Y. Arai, I. Kurachi, M. Hazumi, T. Yoshida, S. Mima, K. Kiuchi, H. Ishino, A. KibayashiY. Kato, G. Fujii, S. Shiki, M. Ukibe, M. Ohkubo, S. Kawahito, E. Ramberg, P. Rubinov, D. Sergatskov, S. B. Kim, Y. H. Kim, H. J. Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665419345
DOIs	https://doi.org/10.1109/VLSI-TSA51926.2021.9440090
Publication status	Published - Apr 19 2021
Event	2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, Taiwan, Province of China Duration: Apr 19 2021 → Apr 22 2021

Publication series

Name	VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference	2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	4/19/21 → 4/22/21

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Control and Optimization

Access to Document

10.1109/VLSI-TSA51926.2021.9440090

Cite this

Takeuchi, Y., Kim, S. H., Iida, T., Asano, C., Wakasa, R., Maekawa, G., Nakahara, S., Yamane, R., Ikeda, H., Wada, T., Nagase, K., Matsuura, S., Arai, Y., Kurachi, I., Hazumi, M., Yoshida, T., Mima, S., Kiuchi, K., Ishino, H., ... Lee, H. J. (2021). Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project. In VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings [9440090] (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA51926.2021.9440090

Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project. / Takeuchi, Y.; Kim, S. H.; Iida, T. et al.

VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. 9440090 (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takeuchi, Y, Kim, SH, Iida, T, Asano, C, Wakasa, R, Maekawa, G, Nakahara, S, Yamane, R, Ikeda, H, Wada, T, Nagase, K, Matsuura, S, Arai, Y, Kurachi, I, Hazumi, M, Yoshida, T, Mima, S, Kiuchi, K, Ishino, H, Kibayashi, A, Kato, Y, Fujii, G, Shiki, S, Ukibe, M, Ohkubo, M, Kawahito, S, Ramberg, E, Rubinov, P, Sergatskov, D, Kim, SB, Kim, YH & Lee, HJ 2021, Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project. in VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings., 9440090, VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings, Institute of Electrical and Electronics Engineers Inc., 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021, Hsinchu, Taiwan, Province of China, 4/19/21. https://doi.org/10.1109/VLSI-TSA51926.2021.9440090

Takeuchi Y, Kim SH, Iida T, Asano C, Wakasa R, Maekawa G et al. Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project. In VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2021. 9440090. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings). doi: 10.1109/VLSI-TSA51926.2021.9440090

Takeuchi, Y. ; Kim, S. H. ; Iida, T. et al. / Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project. VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).

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title = "Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project",

author = "Y. Takeuchi and Kim, {S. H.} and T. Iida and C. Asano and R. Wakasa and G. Maekawa and S. Nakahara and R. Yamane and H. Ikeda and T. Wada and K. Nagase and S. Matsuura and Y. Arai and I. Kurachi and M. Hazumi and T. Yoshida and S. Mima and K. Kiuchi and H. Ishino and A. Kibayashi and Y. Kato and G. Fujii and S. Shiki and M. Ukibe and M. Ohkubo and S. Kawahito and E. Ramberg and P. Rubinov and D. Sergatskov and Kim, {S. B.} and Kim, {Y. H.} and Lee, {H. J.}",

note = "Funding Information: We thank KEK Detector Technology Project for supporting us in development of STJs and SOI amplifiers at KEK. A Part of this work was supported by the Ministry of Education, Science, Sports and Culture of Japan (MEXT KAKENHI Grant Number 20H019). The Nb/Al-STJs were fabricated in the clean room for analog-digital superconductivity (CRAVITY) in National Institute of Advanced Industrial Science and Technology (AIST). The SOI amplifier development is supported by VLSI Design and Education Center (VDEC), the University of Tokyo in collaboration with Cadence Design Systems, Inc., Synopsys, Inc. and Mentor Graphics, Inc.; 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 ; Conference date: 19-04-2021 Through 22-04-2021",

year = "2021",

month = apr,

day = "19",

doi = "10.1109/VLSI-TSA51926.2021.9440090",

language = "English",

series = "VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - GEN

T1 - Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project

AU - Takeuchi, Y.

AU - Kim, S. H.

AU - Iida, T.

AU - Asano, C.

AU - Wakasa, R.

AU - Maekawa, G.

AU - Nakahara, S.

AU - Yamane, R.

AU - Ikeda, H.

AU - Wada, T.

AU - Nagase, K.

AU - Matsuura, S.

AU - Arai, Y.

AU - Kurachi, I.

AU - Hazumi, M.

AU - Yoshida, T.

AU - Mima, S.

AU - Kiuchi, K.

AU - Ishino, H.

AU - Kibayashi, A.

AU - Kato, Y.

AU - Fujii, G.

AU - Shiki, S.

AU - Ukibe, M.

AU - Ohkubo, M.

AU - Kawahito, S.

AU - Ramberg, E.

AU - Rubinov, P.

AU - Sergatskov, D.

AU - Kim, S. B.

AU - Kim, Y. H.

AU - Lee, H. J.

N1 - Funding Information: We thank KEK Detector Technology Project for supporting us in development of STJs and SOI amplifiers at KEK. A Part of this work was supported by the Ministry of Education, Science, Sports and Culture of Japan (MEXT KAKENHI Grant Number 20H019). The Nb/Al-STJs were fabricated in the clean room for analog-digital superconductivity (CRAVITY) in National Institute of Advanced Industrial Science and Technology (AIST). The SOI amplifier development is supported by VLSI Design and Education Center (VDEC), the University of Tokyo in collaboration with Cadence Design Systems, Inc., Synopsys, Inc. and Mentor Graphics, Inc.

PY - 2021/4/19

Y1 - 2021/4/19

UR - http://www.scopus.com/inward/record.url?scp=85108170374&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85108170374&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA51926.2021.9440090

DO - 10.1109/VLSI-TSA51926.2021.9440090

M3 - Conference contribution

AN - SCOPUS:85108170374

T3 - VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

BT - VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021

Y2 - 19 April 2021 through 22 April 2021

ER -

Development of FD-SOI cryogenic amplifier for application to STJ readout in COBAND project

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