Development of a CMOS SOI pixel detector

Y. Arai, M. Hazumi, Y. Ikegami, T. Kohriki, O. Tajima, S. Terada, T. Tsuboyama, Y. Unno, Y. Ushiroda, H. Ikeda, K. Hara, H. Ishino, T. Kawasaki, H. Miyake, E. Martin, G. Varner, H. Tajima, M. Ohno, K. Fukuda, H. KomatsubaraJ. Ida

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

We have developed a monolithic radiation pixel detector using silicon on insulator (SOI) with a commercial 0.15 μm fullydepleted-SOI technology and a Czochralski high resistivity silicon substrate in place of a handle wafer. The SOI TEG (Test Element Group) chips with a size of 2.5 × 2.5 mm2 consisting of 20 × 20 μ m2 pixels have been designed and manufactured. Performance tests with a laser light illumination and a β ray radioactive source indicate successful operation of the detector. We also briefly discuss the back gate effect as well as the simulation study.

Original languageEnglish
Pages263-266
Number of pages4
Publication statusPublished - Jan 1 2007
Externally publishedYes
Event12th Workshop on Electronics for LHC and Future Experiments, LECC 2006 - Valencia, Spain
Duration: Sep 25 2006Sep 29 2006

Other

Other12th Workshop on Electronics for LHC and Future Experiments, LECC 2006
CountrySpain
CityValencia
Period9/25/069/29/06

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

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  • Cite this

    Arai, Y., Hazumi, M., Ikegami, Y., Kohriki, T., Tajima, O., Terada, S., Tsuboyama, T., Unno, Y., Ushiroda, Y., Ikeda, H., Hara, K., Ishino, H., Kawasaki, T., Miyake, H., Martin, E., Varner, G., Tajima, H., Ohno, M., Fukuda, K., ... Ida, J. (2007). Development of a CMOS SOI pixel detector. 263-266. Paper presented at 12th Workshop on Electronics for LHC and Future Experiments, LECC 2006, Valencia, Spain.