Development of a CMOS SOI pixel detector

Y. Arai, M. Hazumi, Y. Ikegami, T. Kohriki, O. Tajima, S. Terada, T. Tsuboyama, Y. Unno, Y. Ushiroda, H. Ikeda, K. Hara, H. Ishino, T. Kawasaki, H. Miyake, E. Martin, G. Varner, H. Tajima, M. Ohno, K. Fukuda, H. KomatsubaraJ. Ida

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)


We have developed a monolithic radiation pixel detector using silicon on insulator (SOI) with a commercial 0.15 μm fullydepleted-SOI technology and a Czochralski high resistivity silicon substrate in place of a handle wafer. The SOI TEG (Test Element Group) chips with a size of 2.5 × 2.5 mm2 consisting of 20 × 20 μ m2 pixels have been designed and manufactured. Performance tests with a laser light illumination and a β ray radioactive source indicate successful operation of the detector. We also briefly discuss the back gate effect as well as the simulation study.

Original languageEnglish
Number of pages4
Publication statusPublished - 2007
Externally publishedYes
Event12th Workshop on Electronics for LHC and Future Experiments, LECC 2006 - Valencia, Spain
Duration: Sept 25 2006Sept 29 2006


Other12th Workshop on Electronics for LHC and Future Experiments, LECC 2006

ASJC Scopus subject areas

  • Nuclear and High Energy Physics


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