Development of a CMOS SOI pixel detector

Y. Arai, M. Hazumi, Y. Ikegami, T. Kohriki, O. Tajima, S. Terada, T. Tsuboyama, Y. Unno, Y. Ushiroda, H. Ikeda, K. Hara, Hirokazu Ishino, T. Kawasaki, H. Miyake, E. Martin, G. Varner, H. Tajima, M. Ohno, K. Fukuda, H. KomatsubaraJ. Ida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have developed a monolithic radiation pixel detector using silicon on insulator (SOI) with a commercial 0.15 μm fullydepleted-SOI technology and a Czochralski high resistivity silicon substrate in place of a handle wafer. The SOI TEG (Test Element Group) chips with a size of 2.5 × 2.5 mm2 consisting of 20 × 20 μ m2 pixels have been designed and manufactured. Performance tests with a laser light illumination and a β ray radioactive source indicate successful operation of the detector. We also briefly discuss the back gate effect as well as the simulation study.

Original languageEnglish
Title of host publicationProceedings - 12th Workshop on Electronics for LHC and Future Experiments, LECC 2006
PublisherCERN
Pages263-266
Number of pages4
Publication statusPublished - 2007
Externally publishedYes
Event12th Workshop on Electronics for LHC and Future Experiments, LECC 2006 - Valencia, Spain
Duration: Sep 25 2006Sep 29 2006

Other

Other12th Workshop on Electronics for LHC and Future Experiments, LECC 2006
CountrySpain
CityValencia
Period9/25/069/29/06

Fingerprint

CMOS
pixels
insulators
detectors
silicon
performance tests
rays
illumination
chips
wafers
electrical resistivity
radiation
lasers
simulation

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

Cite this

Arai, Y., Hazumi, M., Ikegami, Y., Kohriki, T., Tajima, O., Terada, S., ... Ida, J. (2007). Development of a CMOS SOI pixel detector. In Proceedings - 12th Workshop on Electronics for LHC and Future Experiments, LECC 2006 (pp. 263-266). CERN.

Development of a CMOS SOI pixel detector. / Arai, Y.; Hazumi, M.; Ikegami, Y.; Kohriki, T.; Tajima, O.; Terada, S.; Tsuboyama, T.; Unno, Y.; Ushiroda, Y.; Ikeda, H.; Hara, K.; Ishino, Hirokazu; Kawasaki, T.; Miyake, H.; Martin, E.; Varner, G.; Tajima, H.; Ohno, M.; Fukuda, K.; Komatsubara, H.; Ida, J.

Proceedings - 12th Workshop on Electronics for LHC and Future Experiments, LECC 2006. CERN, 2007. p. 263-266.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Arai, Y, Hazumi, M, Ikegami, Y, Kohriki, T, Tajima, O, Terada, S, Tsuboyama, T, Unno, Y, Ushiroda, Y, Ikeda, H, Hara, K, Ishino, H, Kawasaki, T, Miyake, H, Martin, E, Varner, G, Tajima, H, Ohno, M, Fukuda, K, Komatsubara, H & Ida, J 2007, Development of a CMOS SOI pixel detector. in Proceedings - 12th Workshop on Electronics for LHC and Future Experiments, LECC 2006. CERN, pp. 263-266, 12th Workshop on Electronics for LHC and Future Experiments, LECC 2006, Valencia, Spain, 9/25/06.
Arai Y, Hazumi M, Ikegami Y, Kohriki T, Tajima O, Terada S et al. Development of a CMOS SOI pixel detector. In Proceedings - 12th Workshop on Electronics for LHC and Future Experiments, LECC 2006. CERN. 2007. p. 263-266
Arai, Y. ; Hazumi, M. ; Ikegami, Y. ; Kohriki, T. ; Tajima, O. ; Terada, S. ; Tsuboyama, T. ; Unno, Y. ; Ushiroda, Y. ; Ikeda, H. ; Hara, K. ; Ishino, Hirokazu ; Kawasaki, T. ; Miyake, H. ; Martin, E. ; Varner, G. ; Tajima, H. ; Ohno, M. ; Fukuda, K. ; Komatsubara, H. ; Ida, J. / Development of a CMOS SOI pixel detector. Proceedings - 12th Workshop on Electronics for LHC and Future Experiments, LECC 2006. CERN, 2007. pp. 263-266
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AU - Tajima, O.

AU - Terada, S.

AU - Tsuboyama, T.

AU - Unno, Y.

AU - Ushiroda, Y.

AU - Ikeda, H.

AU - Hara, K.

AU - Ishino, Hirokazu

AU - Kawasaki, T.

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AU - Martin, E.

AU - Varner, G.

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AU - Ohno, M.

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AU - Ida, J.

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