Abstract
A novel gate-structure FET-type hydrogen sensor (Pt/Ti-FET) thathas an adhesion layer (Ti) between the catalytic metal (Pt) and the gate insulator was fabricated. The dependence of the response characteristics of the sensitivity and selectivity on the Ti thickness was investigated. The sensitivity showed dependence on Ti thickness, and higher sensitivity was obtained with a decrement in Ti thickness. In addition, the Pt/Ti-FET showed good selectivity against other gases (02, C2H6) compared with the Pt-FET. After annealing at 260°C for 30 min under 5 Pa in a vacuum, the Pt/Ti-FET showed different response characteristics from an as-depositedPt/Ti- FET. The annealed Pt/Ti-FETs with a thin Ti adhesion layer (below 10 nm) showed improved hydrogen sensitivity. In particular, the Ti5-nm sample of the Pt/Ti-FET sensor showed a higher hydrogen responsewhen exposed to 0.8% hydrogen gas (526.2 mV) compared to that of the Pt-FET sensor (415.7 mV). However, improvement in hydrogen sensitivity was not obtained in thick Ti samples. Additionally the annealed Pt/Ti-FET showed better selectivity against 0 2 than as-deposited Pt/Ti-FET.
| Original language | English |
|---|---|
| Pages (from-to) | 407-411 |
| Number of pages | 5 |
| Journal | IEEJ Transactions on Sensors and Micromachines |
| Volume | 130 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - Aug 1 2010 |
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Keywords
- Chemical sensors
- Field effect transistor (FET)
- Hydrogen sensor
- Pt-FET
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Mechanical Engineering
Cite this
Development and evaluation of a Pt/Ti-FET-type hydrogen sensor. / Kariya, Masatoshi; Mizuhara, Kouhei; Yamaguchi, Tomiharu; Kiwa, Toshihiko; Kunitsugu, Shinsuke; Tsukada, Keiji.
In: IEEJ Transactions on Sensors and Micromachines, Vol. 130, No. 8, 01.08.2010, p. 407-411.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Development and evaluation of a Pt/Ti-FET-type hydrogen sensor
AU - Kariya, Masatoshi
AU - Mizuhara, Kouhei
AU - Yamaguchi, Tomiharu
AU - Kiwa, Toshihiko
AU - Kunitsugu, Shinsuke
AU - Tsukada, Keiji
PY - 2010/8/1
Y1 - 2010/8/1
N2 - A novel gate-structure FET-type hydrogen sensor (Pt/Ti-FET) thathas an adhesion layer (Ti) between the catalytic metal (Pt) and the gate insulator was fabricated. The dependence of the response characteristics of the sensitivity and selectivity on the Ti thickness was investigated. The sensitivity showed dependence on Ti thickness, and higher sensitivity was obtained with a decrement in Ti thickness. In addition, the Pt/Ti-FET showed good selectivity against other gases (02, C2H6) compared with the Pt-FET. After annealing at 260°C for 30 min under 5 Pa in a vacuum, the Pt/Ti-FET showed different response characteristics from an as-depositedPt/Ti- FET. The annealed Pt/Ti-FETs with a thin Ti adhesion layer (below 10 nm) showed improved hydrogen sensitivity. In particular, the Ti5-nm sample of the Pt/Ti-FET sensor showed a higher hydrogen responsewhen exposed to 0.8% hydrogen gas (526.2 mV) compared to that of the Pt-FET sensor (415.7 mV). However, improvement in hydrogen sensitivity was not obtained in thick Ti samples. Additionally the annealed Pt/Ti-FET showed better selectivity against 0 2 than as-deposited Pt/Ti-FET.
AB - A novel gate-structure FET-type hydrogen sensor (Pt/Ti-FET) thathas an adhesion layer (Ti) between the catalytic metal (Pt) and the gate insulator was fabricated. The dependence of the response characteristics of the sensitivity and selectivity on the Ti thickness was investigated. The sensitivity showed dependence on Ti thickness, and higher sensitivity was obtained with a decrement in Ti thickness. In addition, the Pt/Ti-FET showed good selectivity against other gases (02, C2H6) compared with the Pt-FET. After annealing at 260°C for 30 min under 5 Pa in a vacuum, the Pt/Ti-FET showed different response characteristics from an as-depositedPt/Ti- FET. The annealed Pt/Ti-FETs with a thin Ti adhesion layer (below 10 nm) showed improved hydrogen sensitivity. In particular, the Ti5-nm sample of the Pt/Ti-FET sensor showed a higher hydrogen responsewhen exposed to 0.8% hydrogen gas (526.2 mV) compared to that of the Pt-FET sensor (415.7 mV). However, improvement in hydrogen sensitivity was not obtained in thick Ti samples. Additionally the annealed Pt/Ti-FET showed better selectivity against 0 2 than as-deposited Pt/Ti-FET.
KW - Chemical sensors
KW - Field effect transistor (FET)
KW - Hydrogen sensor
KW - Pt-FET
UR - http://www.scopus.com/inward/record.url?scp=77956970669&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77956970669&partnerID=8YFLogxK
U2 - 10.1541/ieejsmas.130.407
DO - 10.1541/ieejsmas.130.407
M3 - Article
AN - SCOPUS:77956970669
VL - 130
SP - 407
EP - 411
JO - IEEJ Transactions on Sensors and Micromachines
JF - IEEJ Transactions on Sensors and Micromachines
SN - 1341-8939
IS - 8
ER -