Development and evaluation of a Pt/Ti-FET-type hydrogen sensor

Masatoshi Kariya; Kouhei Mizuhara; Tomiharu Yamaguchi; Toshihiko Kiwa; Shinsuke Kunitsugu; Keiji Tsukada

doi:10.1541/ieejsmas.130.407

Development and evaluation of a Pt/Ti-FET-type hydrogen sensor

Masatoshi Kariya, Kouhei Mizuhara, Tomiharu Yamaguchi, Toshihiko Kiwa, Shinsuke Kunitsugu, Keiji Tsukada

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

A novel gate-structure FET-type hydrogen sensor (Pt/Ti-FET) thathas an adhesion layer (Ti) between the catalytic metal (Pt) and the gate insulator was fabricated. The dependence of the response characteristics of the sensitivity and selectivity on the Ti thickness was investigated. The sensitivity showed dependence on Ti thickness, and higher sensitivity was obtained with a decrement in Ti thickness. In addition, the Pt/Ti-FET showed good selectivity against other gases (0₂, C₂H₆) compared with the Pt-FET. After annealing at 260°C for 30 min under 5 Pa in a vacuum, the Pt/Ti-FET showed different response characteristics from an as-depositedPt/Ti- FET. The annealed Pt/Ti-FETs with a thin Ti adhesion layer (below 10 nm) showed improved hydrogen sensitivity. In particular, the Ti5-nm sample of the Pt/Ti-FET sensor showed a higher hydrogen responsewhen exposed to 0.8% hydrogen gas (526.2 mV) compared to that of the Pt-FET sensor (415.7 mV). However, improvement in hydrogen sensitivity was not obtained in thick Ti samples. Additionally the annealed Pt/Ti-FET showed better selectivity against 0 ₂ than as-deposited Pt/Ti-FET.

Original language	English
Pages (from-to)	407-411
Number of pages	5
Journal	IEEJ Transactions on Sensors and Micromachines
Volume	130
Issue number	8
DOIs	https://doi.org/10.1541/ieejsmas.130.407
Publication status	Published - Aug 1 2010

Keywords

Chemical sensors
Field effect transistor (FET)
Hydrogen sensor
Pt-FET

ASJC Scopus subject areas

Electrical and Electronic Engineering
Mechanical Engineering

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Kariya, M., Mizuhara, K., Yamaguchi, T., Kiwa, T., Kunitsugu, S., & Tsukada, K. (2010). Development and evaluation of a Pt/Ti-FET-type hydrogen sensor. IEEJ Transactions on Sensors and Micromachines, 130(8), 407-411. https://doi.org/10.1541/ieejsmas.130.407

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abstract = "A novel gate-structure FET-type hydrogen sensor (Pt/Ti-FET) thathas an adhesion layer (Ti) between the catalytic metal (Pt) and the gate insulator was fabricated. The dependence of the response characteristics of the sensitivity and selectivity on the Ti thickness was investigated. The sensitivity showed dependence on Ti thickness, and higher sensitivity was obtained with a decrement in Ti thickness. In addition, the Pt/Ti-FET showed good selectivity against other gases (02, C2H6) compared with the Pt-FET. After annealing at 260°C for 30 min under 5 Pa in a vacuum, the Pt/Ti-FET showed different response characteristics from an as-depositedPt/Ti- FET. The annealed Pt/Ti-FETs with a thin Ti adhesion layer (below 10 nm) showed improved hydrogen sensitivity. In particular, the Ti5-nm sample of the Pt/Ti-FET sensor showed a higher hydrogen responsewhen exposed to 0.8% hydrogen gas (526.2 mV) compared to that of the Pt-FET sensor (415.7 mV). However, improvement in hydrogen sensitivity was not obtained in thick Ti samples. Additionally the annealed Pt/Ti-FET showed better selectivity against 0 2 than as-deposited Pt/Ti-FET.",

keywords = "Chemical sensors, Field effect transistor (FET), Hydrogen sensor, Pt-FET",

author = "Masatoshi Kariya and Kouhei Mizuhara and Tomiharu Yamaguchi and Toshihiko Kiwa and Shinsuke Kunitsugu and Keiji Tsukada",

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AU - Kariya, Masatoshi

AU - Mizuhara, Kouhei

AU - Yamaguchi, Tomiharu

AU - Kiwa, Toshihiko

AU - Kunitsugu, Shinsuke

AU - Tsukada, Keiji

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N2 - A novel gate-structure FET-type hydrogen sensor (Pt/Ti-FET) thathas an adhesion layer (Ti) between the catalytic metal (Pt) and the gate insulator was fabricated. The dependence of the response characteristics of the sensitivity and selectivity on the Ti thickness was investigated. The sensitivity showed dependence on Ti thickness, and higher sensitivity was obtained with a decrement in Ti thickness. In addition, the Pt/Ti-FET showed good selectivity against other gases (02, C2H6) compared with the Pt-FET. After annealing at 260°C for 30 min under 5 Pa in a vacuum, the Pt/Ti-FET showed different response characteristics from an as-depositedPt/Ti- FET. The annealed Pt/Ti-FETs with a thin Ti adhesion layer (below 10 nm) showed improved hydrogen sensitivity. In particular, the Ti5-nm sample of the Pt/Ti-FET sensor showed a higher hydrogen responsewhen exposed to 0.8% hydrogen gas (526.2 mV) compared to that of the Pt-FET sensor (415.7 mV). However, improvement in hydrogen sensitivity was not obtained in thick Ti samples. Additionally the annealed Pt/Ti-FET showed better selectivity against 0 2 than as-deposited Pt/Ti-FET.

AB - A novel gate-structure FET-type hydrogen sensor (Pt/Ti-FET) thathas an adhesion layer (Ti) between the catalytic metal (Pt) and the gate insulator was fabricated. The dependence of the response characteristics of the sensitivity and selectivity on the Ti thickness was investigated. The sensitivity showed dependence on Ti thickness, and higher sensitivity was obtained with a decrement in Ti thickness. In addition, the Pt/Ti-FET showed good selectivity against other gases (02, C2H6) compared with the Pt-FET. After annealing at 260°C for 30 min under 5 Pa in a vacuum, the Pt/Ti-FET showed different response characteristics from an as-depositedPt/Ti- FET. The annealed Pt/Ti-FETs with a thin Ti adhesion layer (below 10 nm) showed improved hydrogen sensitivity. In particular, the Ti5-nm sample of the Pt/Ti-FET sensor showed a higher hydrogen responsewhen exposed to 0.8% hydrogen gas (526.2 mV) compared to that of the Pt-FET sensor (415.7 mV). However, improvement in hydrogen sensitivity was not obtained in thick Ti samples. Additionally the annealed Pt/Ti-FET showed better selectivity against 0 2 than as-deposited Pt/Ti-FET.

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KW - Hydrogen sensor

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