Detection of single charges and their generation-recombination dynamics in Si nanowires at room temperature

Akira Fujiwara, Kenji Yamazaki, Yasuo Takahashi

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Detection of single electrons and single holes is demonstrated at room temperature in Si nanowire transistors using an electron-hole (e-h) system. Photogenerated carriers are stored in a quantum dot electrically formed in a Si wire by a front gate. The stored charges affect the current of the other type of carriers that flow along the bottom of the Si wire. The linear photoresponce of single-charge generation is observed. It is revealed that the recombination occurs by a bimolecular process, suggesting that it is due to the e-h interband transition. These results open up the possibility of developing single-photon devices with this system.

Original languageEnglish
Pages (from-to)4567-4569
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number24
DOIs
Publication statusPublished - Jun 17 2002
Externally publishedYes

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nanowires
room temperature
wire
transistors
quantum dots
photons
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Detection of single charges and their generation-recombination dynamics in Si nanowires at room temperature. / Fujiwara, Akira; Yamazaki, Kenji; Takahashi, Yasuo.

In: Applied Physics Letters, Vol. 80, No. 24, 17.06.2002, p. 4567-4569.

Research output: Contribution to journalArticle

Fujiwara, Akira ; Yamazaki, Kenji ; Takahashi, Yasuo. / Detection of single charges and their generation-recombination dynamics in Si nanowires at room temperature. In: Applied Physics Letters. 2002 ; Vol. 80, No. 24. pp. 4567-4569.
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