低インダクタンスを実現する厚銅多層基板を用いたSiC-MOSFET インバータの主回路設計

Translated title of the contribution: Design of main circuit for an SiC-MOSFET inverter using a thick copper multilayer PCB to minimize stray inductance

Kohsuke Ishikawa, Satoshi Ogasawara, Masatsugu Takemoto, Koji Orikawa

Research output: Contribution to journalArticlepeer-review

Abstract

Inverters using SiC or GaN power devices can achieve high frequency and high efficiency operation. To achieve high efficiency, the switching characteristics of these power devices are important because stray inductances in the main circuit of the inverter have a strong influence on the switching characteristics. To reduce switching loss and surge voltage, minimization of stray inductance in the main circuit is required for a high-frequency PWM inverter. This paper describes design guidelines for high-frequency inverters that achieve low inductance. The PCB design guideline on a thick multilayer PCB is derived from the inductance calculation using 3D-FEA. It is shown experimentally that the stray inductance of the designed PCB can be reduced to the same level as the inductance inside the power devices. Experimental results verify that a prototype can achieve high-speed switching and suppress a surge voltage. A load test is demonstrated to evaluate the main circuit efficiency in a half-bridge inverter at 100 kHz.

Translated title of the contributionDesign of main circuit for an SiC-MOSFET inverter using a thick copper multilayer PCB to minimize stray inductance
Original languageJapanese
Pages (from-to)89-98
Number of pages10
Journalieej transactions on industry applications
Volume140
Issue number2
DOIs
Publication statusPublished - 2020
Externally publishedYes

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Design of main circuit for an SiC-MOSFET inverter using a thick copper multilayer PCB to minimize stray inductance'. Together they form a unique fingerprint.

Cite this