Design and fabrication of low-driving-voltage electroabsorption modulators operating at 40 Gb/s

Hideki Fukano, Takayuki Yamanaka, Munehisa Tamura

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In this paper, a design for low-driving-voltage InGaAlAs/InAlAs electroabsorption modulators (EAMs) operating at 40 Gb/s is described. The theoretical calculation clarified that the tensile-strained InGaAlAs/ InAlAs multiquantum-well layers with thin wells provide large and steep extinction characteristics. This was experimentally confirmed. We modeled an EAM with a low-loss coplanar waveguide for both the input and output ports and designed an optimized core structure that assures a sufficient extinction ratio and electrical-to-optical bandwidth for 40-Gb/s operation, in terms of well number and core length. A fabricated device driven by a peak-to-peak voltage as low as 1.1 V shows a 3-dB bandwidth of over 50 GHz and an RF extinction ratio of 10 dB. Error-free operation at 40 Gb/s is confirmed.

Original languageEnglish
Pages (from-to)1961-1969
Number of pages9
JournalJournal of Lightwave Technology
Volume25
Issue number8
DOIs
Publication statusPublished - Aug 1 2007
Externally publishedYes

Keywords

  • EA modulator (EAM)
  • Electroabsorption (EA)
  • InGaAlAs/InAlAs
  • Low driving voltage

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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